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Low, L.L., Yam, F.K., Beh, K.P., Hassan, Z. (2011) The influence of growth temperatures on the characteristics of GaN nanowires. Applied Surface Science, 258. 542-546 doi:10.1016/j.apsusc.2011.08.071

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of growth temperatures on the characteristics of GaN nanowires
JournalApplied Surface Science
AuthorsLow, L.L.Author
Yam, F.K.Author
Beh, K.P.Author
Hassan, Z.Author
Year2011 (October)Volume258
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2011.08.071Search in ResearchGate
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Mindat Ref. ID9917522Long-form Identifiermindat:1:5:9917522:3
GUID0
Full ReferenceLow, L.L., Yam, F.K., Beh, K.P., Hassan, Z. (2011) The influence of growth temperatures on the characteristics of GaN nanowires. Applied Surface Science, 258. 542-546 doi:10.1016/j.apsusc.2011.08.071
Plain TextLow, L.L., Yam, F.K., Beh, K.P., Hassan, Z. (2011) The influence of growth temperatures on the characteristics of GaN nanowires. Applied Surface Science, 258. 542-546 doi:10.1016/j.apsusc.2011.08.071
In(n.d.) Applied Surface Science Vol. 258. Elsevier BV

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Tan, L.K., Yam, F.K., Low, L.L., Beh, K.P., Hassan, Z. (2014) The influence of growth temperatures on the characteristics of GaN nanowires: The Raman study. Physica B: Condensed Matter, 434. 101-105 doi:10.1016/j.physb.2013.10.064
Low, L.L., Yam, F.K., Beh, K.P., Hassan, Z. (2011) The influence of Ga source and substrate position on the growth of low dimensional GaN wires by chemical vapour deposition. Applied Surface Science, 257. 10052-10055 doi:10.1016/j.apsusc.2011.06.138
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Yam, F.K., Hassan, Z. (2007) Schottky diode based on porous GaN for hydrogen gas sensing application. Applied Surface Science, 253. 9525-9528 doi:10.1016/j.apsusc.2007.05.071
Abdulgafour, H.I., Hassan, Z., Yam, F.K., AL-Heuseen, K., Yusof, Y. (2011) Enhancing photoresponse time of low cost Pd/ZnO nanorods prepared by thermal evaporation techniques for UV detection. Applied Surface Science, 258. 461-465 doi:10.1016/j.apsusc.2011.08.093
Yam, F.K., Hassan, Z., Chuah, L.S., Ali, Y.P. (2007) Investigation of structural and optical properties of nanoporous GaN film. Applied Surface Science, 253. 7429-7434 doi:10.1016/j.apsusc.2007.03.032
Beh, K.P., Yam, F.K., Chin, C.W., Tneh, S.S., Hassan, Z. (2010) The growth of III–V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy. Journal of Alloys and Compounds, 506. 343-346 doi:10.1016/j.jallcom.2010.06.204
Lee, Y.C., Hassan, Z., Yam, F.K., Abdullah, M.J., Ibrahim, K., Barmawi, M., Sugianto, , Budiman, M., Arifin, P. (2005) A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon. Applied Surface Science, 249. 91-96 doi:10.1016/j.apsusc.2004.11.063
Shekari, L., Hassan, H. Abu, Thahab, S.M., Ghazai, A.J., Hassan, Z. (2012) Growth and analysis of GaN nanowire on PZnO by different-gas flow. Applied Surface Science, 258. 6590-6594 doi:10.1016/j.apsusc.2012.03.084
Yam, F.K., Hassan, Z. (2009) Structural and optical characteristics of porous GaN generated by electroless chemical etching. Materials Letters, 63. 724-727 doi:10.1016/j.matlet.2008.12.040
Fong, C.Y., Ng, S.S., Yam, F.K., Hassan, H. Abu, Hassan, Z. (2015) An investigation of sol–gel spin coating growth of wurtzite GaN thin film on 6H–SiC substrate. Journal of Crystal Growth, 413. 1-4 doi:10.1016/j.jcrysgro.2014.12.011
 
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