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Hirao, N., Baba, Y., Sekiguchi, T., Shimoyama, I., Honda, M. (2011) Microscopic observation of lateral diffusion at Si–SiO2 interface by photoelectron emission microscopy using synchrotron radiation. Applied Surface Science, 258. 987-990 doi:10.1016/j.apsusc.2011.04.047

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Reference TypeJournal (article/letter/editorial)
TitleMicroscopic observation of lateral diffusion at Si–SiO2 interface by photoelectron emission microscopy using synchrotron radiation
JournalApplied Surface Science
AuthorsHirao, N.Author
Baba, Y.Author
Sekiguchi, T.Author
Shimoyama, I.Author
Honda, M.Author
Year2011 (November)Volume258
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2011.04.047Search in ResearchGate
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Mindat Ref. ID9918571Long-form Identifiermindat:1:5:9918571:6
GUID0
Full ReferenceHirao, N., Baba, Y., Sekiguchi, T., Shimoyama, I., Honda, M. (2011) Microscopic observation of lateral diffusion at Si–SiO2 interface by photoelectron emission microscopy using synchrotron radiation. Applied Surface Science, 258. 987-990 doi:10.1016/j.apsusc.2011.04.047
Plain TextHirao, N., Baba, Y., Sekiguchi, T., Shimoyama, I., Honda, M. (2011) Microscopic observation of lateral diffusion at Si–SiO2 interface by photoelectron emission microscopy using synchrotron radiation. Applied Surface Science, 258. 987-990 doi:10.1016/j.apsusc.2011.04.047
In(n.d.) Applied Surface Science Vol. 258. Elsevier BV

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