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Liu, Dongliang, Deng, Jianguo, Jin, Yongzhong, He, Cheng (2012) Adsorption of atomic oxygen on HfC and TaC (110) surface from first principles. Applied Surface Science, 261. 214-218 doi:10.1016/j.apsusc.2012.07.145

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Reference TypeJournal (article/letter/editorial)
TitleAdsorption of atomic oxygen on HfC and TaC (110) surface from first principles
JournalApplied Surface Science
AuthorsLiu, DongliangAuthor
Deng, JianguoAuthor
Jin, YongzhongAuthor
He, ChengAuthor
Year2012 (November)Volume261
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2012.07.145Search in ResearchGate
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Mindat Ref. ID9919296Long-form Identifiermindat:1:5:9919296:5
GUID0
Full ReferenceLiu, Dongliang, Deng, Jianguo, Jin, Yongzhong, He, Cheng (2012) Adsorption of atomic oxygen on HfC and TaC (110) surface from first principles. Applied Surface Science, 261. 214-218 doi:10.1016/j.apsusc.2012.07.145
Plain TextLiu, Dongliang, Deng, Jianguo, Jin, Yongzhong, He, Cheng (2012) Adsorption of atomic oxygen on HfC and TaC (110) surface from first principles. Applied Surface Science, 261. 214-218 doi:10.1016/j.apsusc.2012.07.145
In(n.d.) Applied Surface Science Vol. 261. Elsevier BV

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Liu, Dongliang, Jin, Yongzhong, Deng, Jianguo, He, Cheng (2011) Atomic oxygen adsorption on the silicon-doped hafnium carbide (001) surface from first principles. Computational Materials Science, 50 (8). 2530-2534 doi:10.1016/j.commatsci.2011.03.023
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