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Kim, Hong-Yeol, Kim, Jihyun, Freitas, Jaime A. (2013) Penetration depth profiling of proton-irradiated 4H-SiC at 6MeV and 8MeV by micro-Raman spectroscopy. Applied Surface Science, 270. 44-48 doi:10.1016/j.apsusc.2012.12.014

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Reference TypeJournal (article/letter/editorial)
TitlePenetration depth profiling of proton-irradiated 4H-SiC at 6MeV and 8MeV by micro-Raman spectroscopy
JournalApplied Surface Science
AuthorsKim, Hong-YeolAuthor
Kim, JihyunAuthor
Freitas, Jaime A.Author
Year2013 (April)Volume270
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2012.12.014Search in ResearchGate
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Mindat Ref. ID9920143Long-form Identifiermindat:1:5:9920143:0
GUID0
Full ReferenceKim, Hong-Yeol, Kim, Jihyun, Freitas, Jaime A. (2013) Penetration depth profiling of proton-irradiated 4H-SiC at 6MeV and 8MeV by micro-Raman spectroscopy. Applied Surface Science, 270. 44-48 doi:10.1016/j.apsusc.2012.12.014
Plain TextKim, Hong-Yeol, Kim, Jihyun, Freitas, Jaime A. (2013) Penetration depth profiling of proton-irradiated 4H-SiC at 6MeV and 8MeV by micro-Raman spectroscopy. Applied Surface Science, 270. 44-48 doi:10.1016/j.apsusc.2012.12.014
In(n.d.) Applied Surface Science Vol. 270. Elsevier BV

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