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Dong, Lin, Sun, Guosheng, Yu, Jun, Zheng, Liu, Liu, Xingfang, Zhang, Feng, Yan, Guoguo, Li, Xiguang, Wang, Zhanguo (2013) Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates. Applied Surface Science, 270. 301-306 doi:10.1016/j.apsusc.2013.01.018

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates
JournalApplied Surface Science
AuthorsDong, LinAuthor
Sun, GuoshengAuthor
Yu, JunAuthor
Zheng, LiuAuthor
Liu, XingfangAuthor
Zhang, FengAuthor
Yan, GuoguoAuthor
Li, XiguangAuthor
Wang, ZhanguoAuthor
Year2013 (April)Volume270
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2013.01.018Search in ResearchGate
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Mindat Ref. ID9920181Long-form Identifiermindat:1:5:9920181:0
GUID0
Full ReferenceDong, Lin, Sun, Guosheng, Yu, Jun, Zheng, Liu, Liu, Xingfang, Zhang, Feng, Yan, Guoguo, Li, Xiguang, Wang, Zhanguo (2013) Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates. Applied Surface Science, 270. 301-306 doi:10.1016/j.apsusc.2013.01.018
Plain TextDong, Lin, Sun, Guosheng, Yu, Jun, Zheng, Liu, Liu, Xingfang, Zhang, Feng, Yan, Guoguo, Li, Xiguang, Wang, Zhanguo (2013) Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates. Applied Surface Science, 270. 301-306 doi:10.1016/j.apsusc.2013.01.018
In(n.d.) Applied Surface Science Vol. 270. Elsevier BV

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