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Tao, Ke, Hanna, Jun-ichi (2013) Epitaxial growth of germanium-rich silicon–germanium films on Si(001) substrate by reactive thermal chemical vapor deposition. Applied Surface Science, 282. 472-477 doi:10.1016/j.apsusc.2013.05.156

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of germanium-rich silicon–germanium films on Si(001) substrate by reactive thermal chemical vapor deposition
JournalApplied Surface Science
AuthorsTao, KeAuthor
Hanna, Jun-ichiAuthor
Year2013 (October)Volume282
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2013.05.156Search in ResearchGate
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Mindat Ref. ID9921156Long-form Identifiermindat:1:5:9921156:1
GUID0
Full ReferenceTao, Ke, Hanna, Jun-ichi (2013) Epitaxial growth of germanium-rich silicon–germanium films on Si(001) substrate by reactive thermal chemical vapor deposition. Applied Surface Science, 282. 472-477 doi:10.1016/j.apsusc.2013.05.156
Plain TextTao, Ke, Hanna, Jun-ichi (2013) Epitaxial growth of germanium-rich silicon–germanium films on Si(001) substrate by reactive thermal chemical vapor deposition. Applied Surface Science, 282. 472-477 doi:10.1016/j.apsusc.2013.05.156
In(n.d.) Applied Surface Science Vol. 282. Elsevier BV

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Tao, Ke, Kurosawa, Yoshinori, Hanna, Jun-ichi (2013) Low-temperature epitaxial growth of high quality Si1−xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition. Applied Physics Letters, 102 (18). 182109pp. doi:10.1063/1.4804362
Mukherjee, C., Seitz, H., Schröder, B. (2001) Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition. Applied Physics Letters, 78 (22). 3457-3459 doi:10.1063/1.1371789
Todd, Michael A, Weeks, Keith D (2004) Low temperature, high growth rate epitaxial silicon and silicon germanium alloy films. Applied Surface Science, 224. 41-45 doi:10.1016/j.apsusc.2003.08.067
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