Reference Type | Journal (article/letter/editorial) |
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Title | Excellent resistive switching property and physical mechanism of amorphous TiO2 thin films fabricated by a low-temperature photochemical solution deposition method |
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Journal | Applied Surface Science |
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Authors | Zou, Lilan | Author |
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Hu, Wei | Author |
Xie, Wei | Author |
Chen, Ruqi | Author |
Qin, Ni | Author |
Li, Baojun | Author |
Bao, Dinghua | Author |
Year | 2014 (August) | Volume | 311 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/j.apsusc.2014.05.139Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 9923269 | Long-form Identifier | mindat:1:5:9923269:8 |
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GUID | 0 |
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Full Reference | Zou, Lilan, Hu, Wei, Xie, Wei, Chen, Ruqi, Qin, Ni, Li, Baojun, Bao, Dinghua (2014) Excellent resistive switching property and physical mechanism of amorphous TiO2 thin films fabricated by a low-temperature photochemical solution deposition method. Applied Surface Science, 311. 697-702 doi:10.1016/j.apsusc.2014.05.139 |
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Plain Text | Zou, Lilan, Hu, Wei, Xie, Wei, Chen, Ruqi, Qin, Ni, Li, Baojun, Bao, Dinghua (2014) Excellent resistive switching property and physical mechanism of amorphous TiO2 thin films fabricated by a low-temperature photochemical solution deposition method. Applied Surface Science, 311. 697-702 doi:10.1016/j.apsusc.2014.05.139 |
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In | (n.d.) Applied Surface Science Vol. 311. Elsevier BV |
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