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Shan, Dan, Ji, Yang, Li, Dongke, Xu, Jun, Qian, Mingqing, Xu, Ling, Chen, Kunji (2017) Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping. Applied Surface Science, 425. 492-496 doi:10.1016/j.apsusc.2017.07.011

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping
JournalApplied Surface Science
AuthorsShan, DanAuthor
Ji, YangAuthor
Li, DongkeAuthor
Xu, JunAuthor
Qian, MingqingAuthor
Xu, LingAuthor
Chen, KunjiAuthor
Year2017 (December)Volume425
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2017.07.011Search in ResearchGate
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Mindat Ref. ID9932086Long-form Identifiermindat:1:5:9932086:9
GUID0
Full ReferenceShan, Dan, Ji, Yang, Li, Dongke, Xu, Jun, Qian, Mingqing, Xu, Ling, Chen, Kunji (2017) Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping. Applied Surface Science, 425. 492-496 doi:10.1016/j.apsusc.2017.07.011
Plain TextShan, Dan, Ji, Yang, Li, Dongke, Xu, Jun, Qian, Mingqing, Xu, Ling, Chen, Kunji (2017) Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping. Applied Surface Science, 425. 492-496 doi:10.1016/j.apsusc.2017.07.011
In(n.d.) Applied Surface Science Vol. 425. Elsevier BV

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