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Yu, Yantao, Wang, Chunqi, Jiang, Chao, Abrahams, Isaac, Du, Zuojuan, Zhang, Qiancheng, Sun, Jia, Huang, Xiaozhong (2019) Resistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions. Applied Surface Science, 485. 222-229 doi:10.1016/j.apsusc.2019.04.119

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Reference TypeJournal (article/letter/editorial)
TitleResistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions
JournalApplied Surface Science
AuthorsYu, YantaoAuthor
Wang, ChunqiAuthor
Jiang, ChaoAuthor
Abrahams, IsaacAuthor
Du, ZuojuanAuthor
Zhang, QianchengAuthor
Sun, JiaAuthor
Huang, XiaozhongAuthor
Year2019 (August)Volume485
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2019.04.119Search in ResearchGate
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Mindat Ref. ID9938220Long-form Identifiermindat:1:5:9938220:3
GUID0
Full ReferenceYu, Yantao, Wang, Chunqi, Jiang, Chao, Abrahams, Isaac, Du, Zuojuan, Zhang, Qiancheng, Sun, Jia, Huang, Xiaozhong (2019) Resistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions. Applied Surface Science, 485. 222-229 doi:10.1016/j.apsusc.2019.04.119
Plain TextYu, Yantao, Wang, Chunqi, Jiang, Chao, Abrahams, Isaac, Du, Zuojuan, Zhang, Qiancheng, Sun, Jia, Huang, Xiaozhong (2019) Resistive switching behavior in memristors with TiO2 nanorod arrays of different dimensions. Applied Surface Science, 485. 222-229 doi:10.1016/j.apsusc.2019.04.119
In(n.d.) Applied Surface Science Vol. 485. Elsevier BV

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