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Zhang, Junkai, Zhang, Yan, Wu, Xiaoxin, Guan, Renquan, Li, Ji, Gao, Chunxiao, Wang, Qinglin, Ma, Yanzhang, Zhao, Zhao, Liu, Guangtao (2020) High-pressure topological transport study of Bi2Se3 single crystal. Applied Surface Science, 507. 145052pp. doi:10.1016/j.apsusc.2019.145052

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Reference TypeJournal (article/letter/editorial)
TitleHigh-pressure topological transport study of Bi2Se3 single crystal
JournalApplied Surface Science
AuthorsZhang, JunkaiAuthor
Zhang, YanAuthor
Wu, XiaoxinAuthor
Guan, RenquanAuthor
Li, JiAuthor
Gao, ChunxiaoAuthor
Wang, QinglinAuthor
Ma, YanzhangAuthor
Zhao, ZhaoAuthor
Liu, GuangtaoAuthor
Year2020 (March)Volume507
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2019.145052Search in ResearchGate
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Mindat Ref. ID9940582Long-form Identifiermindat:1:5:9940582:3
GUID0
Full ReferenceZhang, Junkai, Zhang, Yan, Wu, Xiaoxin, Guan, Renquan, Li, Ji, Gao, Chunxiao, Wang, Qinglin, Ma, Yanzhang, Zhao, Zhao, Liu, Guangtao (2020) High-pressure topological transport study of Bi2Se3 single crystal. Applied Surface Science, 507. 145052pp. doi:10.1016/j.apsusc.2019.145052
Plain TextZhang, Junkai, Zhang, Yan, Wu, Xiaoxin, Guan, Renquan, Li, Ji, Gao, Chunxiao, Wang, Qinglin, Ma, Yanzhang, Zhao, Zhao, Liu, Guangtao (2020) High-pressure topological transport study of Bi2Se3 single crystal. Applied Surface Science, 507. 145052pp. doi:10.1016/j.apsusc.2019.145052
In(n.d.) Applied Surface Science Vol. 507. Elsevier BV

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