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Armigliato, A., Servidori, M., Solmi, S., Zani, A. (1980) Role of a polysilicon layer in the reduction of lattice defects associated with phosphorus predeposition in silicon. Journal of Materials Science, 15. 1124-1130 doi:10.1007/bf00551800

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Reference TypeJournal (article/letter/editorial)
TitleRole of a polysilicon layer in the reduction of lattice defects associated with phosphorus predeposition in silicon
JournalJournal of Materials Science
AuthorsArmigliato, A.Author
Servidori, M.Author
Solmi, S.Author
Zani, A.Author
Year1980 (May)Volume15
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00551800Search in ResearchGate
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Mindat Ref. ID9984507Long-form Identifiermindat:1:5:9984507:6
GUID0
Full ReferenceArmigliato, A., Servidori, M., Solmi, S., Zani, A. (1980) Role of a polysilicon layer in the reduction of lattice defects associated with phosphorus predeposition in silicon. Journal of Materials Science, 15. 1124-1130 doi:10.1007/bf00551800
Plain TextArmigliato, A., Servidori, M., Solmi, S., Zani, A. (1980) Role of a polysilicon layer in the reduction of lattice defects associated with phosphorus predeposition in silicon. Journal of Materials Science, 15. 1124-1130 doi:10.1007/bf00551800
In(n.d.) Journal of Materials Science Vol. 15. Springer Science and Business Media LLC

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Armigliato, A., Nobili, D., Servidori, M., Solmi, S. (1976) SiP precipitation within the doped silicon lattice, concomitant with phosphorus predeposition. Journal of Applied Physics, 47 (12). 5489-5491 doi:10.1063/1.322549
Solmi, S., Armigliato, A., Govoni, D., Lotti, R., Negrini, P., Servidori, M., Zani, A. (1985) Effect of Chlorine Implantation on Phosphorus Predeposition in Silicon. physica status solidi (a), 89 (2). 533-539 doi:10.1002/pssa.2210890214
Armigliato, A., Servidori, M., Solmi, S., Vecchi, I. (1977) On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition. Journal of Applied Physics, 48 (5). 1806-1812 doi:10.1063/1.323931
Servidori, M., Armigliato, A. (1975) Electron microscopy of silicon monophosphide precipitates in P-diffused silicon. Journal of Materials Science, 10. 306-313 doi:10.1007/bf00540355
Armigliato, A., Solmi, S., Donolato, C., Negrini, P., Gabilli, E., Garulli, A., Kittler, M. (1985) Influence of chlorine implantation on phosphorus diffusivity and oxidation-induced defects in silicon. physica status solidi (a), 87 (1). 207-216 doi:10.1002/pssa.2210870121
Nobili, D., Armigliato, A., Finnetti, M., Solmi, S. (1982) Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon. Journal of Applied Physics, 53 (3). 1484-1491 doi:10.1063/1.330646
Servidori, M., Solmi, S., Zaumseil, P., Winter, U., Anderle, M. (1989) Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorus implanted in silicon. Journal of Applied Physics, 65 (1). 98-104 doi:10.1063/1.343382
Negrini, P., Servidori, M., Solmi, S. (1990) Phosphorus-enhanced diffusion in silicon induced by implantation damage: Dependence on defect depth position. Philosophical Magazine A, 61 (4). 553-561 doi:10.1080/01418619008231934
NEGRINI, P., NOBILI, D., SOLMI, S. (1975) ChemInform Abstract: KINETICS OF PHOSPHORUS PREDEPOSITION IN SILICON USING POCL3. Chemischer Informationsdienst, 6 (48) doi:10.1002/chin.197548035
Servidori, M., Cembali, F., Fabbri, R., Gabilli, E., Negrini, P., Solmi, S., Zaumseil, P., Winter, U., Anderle, M., Canteri, R. (1989) Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 347-351 doi:10.1016/0168-583x(89)90800-8
Parisini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J. R., Allain, J. L. (1990) Electrical activity and structural evolution correlations in laser and thermally annealed Asā€implanted Si specimens. Journal of Applied Physics, 67 (5). 2320-2332 doi:10.1063/1.345527
 
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