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Hughes, G. S., McGreavy, C., Merkin, J. H. (1980) A theoretical model of the manfacture of reaction-bonded silicon nitride with particular emphasis on the effect of ambient reaction temperature and compact size. Journal of Materials Science, 15. 2345-2353 doi:10.1007/bf00552327

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Reference TypeJournal (article/letter/editorial)
TitleA theoretical model of the manfacture of reaction-bonded silicon nitride with particular emphasis on the effect of ambient reaction temperature and compact size
JournalJournal of Materials Science
AuthorsHughes, G. S.Author
McGreavy, C.Author
Merkin, J. H.Author
Year1980 (September)Volume15
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00552327Search in ResearchGate
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Mindat Ref. ID9984679Long-form Identifiermindat:1:5:9984679:2
GUID0
Full ReferenceHughes, G. S., McGreavy, C., Merkin, J. H. (1980) A theoretical model of the manfacture of reaction-bonded silicon nitride with particular emphasis on the effect of ambient reaction temperature and compact size. Journal of Materials Science, 15. 2345-2353 doi:10.1007/bf00552327
Plain TextHughes, G. S., McGreavy, C., Merkin, J. H. (1980) A theoretical model of the manfacture of reaction-bonded silicon nitride with particular emphasis on the effect of ambient reaction temperature and compact size. Journal of Materials Science, 15. 2345-2353 doi:10.1007/bf00552327
In(n.d.) Journal of Materials Science Vol. 15. Springer Science and Business Media LLC

See Also

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Hughes, G. S., Mcgreavy, C., Merkin, J. H. (1979) Transport effects in the manufacture of reaction-bonded silicon nitride. The Canadian Journal of Chemical Engineering, 57 (2) 198-202 doi:10.1002/cjce.5450570211
Evans, J. R. G., Moulson, A. J. (1983) The effect of impurities on the densification of reaction-bonded silicon nitride (RBSN). Journal of Materials Science, 18. 3721-3728 doi:10.1007/bf00540745
Mangels, John A. (1980) The effect of silicon purity on the strength of reaction-bonded Si3N4. Journal of Materials Science, 15. 2132-2135 doi:10.1007/bf00550647
Thorp, J. S., Bushell, T. G. (1985) Ultrasonic examination of reaction bonded silicon nitride. Journal of Materials Science, 20. 2265-2274 doi:10.1007/bf01112313
Thorp, J. S., Bushell, T. G., Evans, D., Rad, N. E. (1987) The temperature and frequency dependencies of permittivity and dielectric loss in reaction bonded silicon nitride. Journal of Materials Science, 22. 2641-2644 doi:10.1007/bf01082157
Danforth, S. C., Richman, M. H. (1979) Variations in pore structure of reaction-bonded silicon nitride (RBSN). Journal of Materials Science, 14. 240-241 doi:10.1007/bf01028353
Thorp, J. S., Ahmad, A. B., Kulesza, B. L. J., Bushell, T. G. (1984) The permittivity and dielectric loss of reaction-bonded silicon nitride. Journal of Materials Science, 19. 3680-3686 doi:10.1007/bf02396940
Heinrich, J., Streb, G. (1979) Quantitative microstructural analysis of reaction-bonded silicon nitride. Journal of Materials Science, 14. 2083-2090 doi:10.1007/bf00688412
Chakraborty, D., Mukerji, J. (1980) Characterization of silicon nitride single crystals and polycrystalline reaction sintered silicon nitride by microhardness measurements. Journal of Materials Science, 15. 3051-3056 doi:10.1007/bf00550375
Moulson, A. J. (1979) Reaction-bonded silicon nitride: its formation and properties. Journal of Materials Science, 14. 1017-1051 doi:10.1007/bf00561287
Barlier, P., Torre, J. P. (1979) On the influence of a gaseous boundary layer on the oxidation of reaction-bonded silicon nitride at 1400� C. Journal of Materials Science, 14. 235-237 doi:10.1007/bf01028351
 
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