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Ishizaki, K., Egashira, T., Tanaka, K., Celis, P. B. (1989) Direct production of ultra-fine nitrides (Si3N4 and AIN) and carbides (SiC, WC and TiC) powders by the arc plasma method. Journal of Materials Science, 24. 3553-3559 doi:10.1007/bf02385739

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Reference TypeJournal (article/letter/editorial)
TitleDirect production of ultra-fine nitrides (Si3N4 and AIN) and carbides (SiC, WC and TiC) powders by the arc plasma method
JournalJournal of Materials Science
AuthorsIshizaki, K.Author
Egashira, T.Author
Tanaka, K.Author
Celis, P. B.Author
Year1989 (October)Volume24
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf02385739Search in ResearchGate
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Mindat Ref. ID9989141Long-form Identifiermindat:1:5:9989141:9
GUID0
Full ReferenceIshizaki, K., Egashira, T., Tanaka, K., Celis, P. B. (1989) Direct production of ultra-fine nitrides (Si3N4 and AIN) and carbides (SiC, WC and TiC) powders by the arc plasma method. Journal of Materials Science, 24. 3553-3559 doi:10.1007/bf02385739
Plain TextIshizaki, K., Egashira, T., Tanaka, K., Celis, P. B. (1989) Direct production of ultra-fine nitrides (Si3N4 and AIN) and carbides (SiC, WC and TiC) powders by the arc plasma method. Journal of Materials Science, 24. 3553-3559 doi:10.1007/bf02385739
In(n.d.) Journal of Materials Science Vol. 24. Springer Science and Business Media LLC

See Also

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Tanaka, K., Ishizaki, K., Yumoto, S., Egashira, T., Uda, M. (1987) Production of ultra-fine silicon powder by the arc plasma method. Journal of Materials Science, 22. 2192-2198 doi:10.1007/bf01132959
Ishizaki, K., Yumoto, S., Tanaka, K. (1988) Production of silicon nitride by gas nitridation of ultra-fine silicon powder. Journal of Materials Science, 23. 1813-1816 doi:10.1007/bf01115725
Nariki, Yasufumi, Inoue, Yasunobu, Tanaka, Kohichi (1990) Production of ultra fine SiC powder from SiC bulk by arc-plasma irradiation under different atmospheres and its application to photocatalysts. Journal of Materials Science, 25. 3101-3104 doi:10.1007/bf00587657
Inoue, Yasunobu, Nariki, Yasufumi, Tanaka, Kohichi (1989) Mechanism of production of ultra-fine silicon carbide powder by arc plasma irradiation of silicon bulk in methane-based atmospheres. Journal of Materials Science, 24. 3819-3823 doi:10.1007/bf01168941
Moriyoshi, Y., Futaki, M., Komatsu, S., Okada, K., Ishigaki, T., Ekinaga, N. (1996) Preparation and characterization of ultra-fine diamond powders obtained by using a d.c. arc plasma jet. Journal of Materials Science, 31. 3579-3582 doi:10.1007/bf00360765
Kijima, K., Noguchi, H., Konishi, M. (1989) Sintering of ultrafine SiC powders prepared by plasma CVD. Journal of Materials Science, 24. 2929-2933 doi:10.1007/bf02385649
Vissokov, G. P., Manolova, K. D., Brakalov, L. B. (1981) Chemical preparation of ultra-fine aluminium oxide by electric arc plasma. Journal of Materials Science, 16. 1716-1719 doi:10.1007/bf02396898
Vissokov, G. P., Manolova, K. D., Brakalov, L. B. (1981) Chemical preparation of ultra-fine aluminium oxide by electric arc plasma. Journal of Materials Science, 16. 1716-1719 doi:10.1007/pl00020606
Bhaumik, S. K., Upadhyaya, G. S., Vaidya, M. L. (1991) Properties and microstructure of WC–TiC–Co and WC–TiC–MO2C–Co(Ni) cemented carbides. Materials Science and Technology, 7. 723-727 doi:10.1179/mst.1991.7.8.723
Vissokov, G. P., Brakalov, L. B. (1983) Chemical preparation of ultra-fine aluminium nitride by electric-arc plasma. Journal of Materials Science, 18. 2011-2016 doi:10.1007/bf00554994
Colombier, C., Lux, B. (1989) Formation of mixed TiC/Al2O3 layers and ?a- and ?-Al2O3 on cemented carbides by chemical vapour deposition. Journal of Materials Science, 24. 462-470 doi:10.1007/bf01107428
 
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