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Çelik, C., Ünlü, K., Ramakrishnan, K., Rajaraman, R., Narayanan, V., Irwin, M. J., Xie, Y. (2008) Thermal neutron induced soft error rate measurement in semiconductor memories and circuits. Journal of Radioanalytical and Nuclear Chemistry, 278. 509-512 doi:10.1007/s10967-008-0914-1

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Reference TypeJournal (article/letter/editorial)
TitleThermal neutron induced soft error rate measurement in semiconductor memories and circuits
JournalJournal of Radioanalytical and Nuclear Chemistry
AuthorsÇelik, C.Author
Ünlü, K.Author
Ramakrishnan, K.Author
Rajaraman, R.Author
Narayanan, V.Author
Irwin, M. J.Author
Xie, Y.Author
Year2008 (November)Volume278
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s10967-008-0914-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10085771Long-form Identifiermindat:1:5:10085771:3
GUID0
Full ReferenceÇelik, C., Ünlü, K., Ramakrishnan, K., Rajaraman, R., Narayanan, V., Irwin, M. J., Xie, Y. (2008) Thermal neutron induced soft error rate measurement in semiconductor memories and circuits. Journal of Radioanalytical and Nuclear Chemistry, 278. 509-512 doi:10.1007/s10967-008-0914-1
Plain TextÇelik, C., Ünlü, K., Ramakrishnan, K., Rajaraman, R., Narayanan, V., Irwin, M. J., Xie, Y. (2008) Thermal neutron induced soft error rate measurement in semiconductor memories and circuits. Journal of Radioanalytical and Nuclear Chemistry, 278. 509-512 doi:10.1007/s10967-008-0914-1
In(n.d.) Journal of Radioanalytical and Nuclear Chemistry Vol. 278. Springer Science and Business Media LLC

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