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AHMED, W., FOORD, J. S., SINGH, N. K., PILKINGTON, R. D. (1991) THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991224

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Reference TypeJournal (article/letter/editorial)
TitleTHE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES
JournalLe Journal de Physique IV
AuthorsAHMED, W.Author
FOORD, J. S.Author
SINGH, N. K.Author
PILKINGTON, R. D.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991224Search in ResearchGate
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Mindat Ref. ID10295514Long-form Identifiermindat:1:5:10295514:1
GUID0
Full ReferenceAHMED, W., FOORD, J. S., SINGH, N. K., PILKINGTON, R. D. (1991) THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991224
Plain TextAHMED, W., FOORD, J. S., SINGH, N. K., PILKINGTON, R. D. (1991) THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991224
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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AHMED, W., PILKINGTON, R. D., MEAKIN, D. B. (1991) UHV CHEMICAL VAPOUR DEPOSITION OF UNDOPED AND IN-SITU DOPED POLYSILICON FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991295
RICHTER, W., KURPAS, P. (1991) IN - SITU OPTICAL CHARACTERISATION OF CVD PROCESSES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991218
PILKINGTON, R. D., JONES, P. A., AHMED, W., TOMLINSON, R. D., HILL, A. E., SMITH, J. J., NUTTALL, R. (1991) LOW PRESSURE MOCVD OF COPPER BASED COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991232
WERNER, C . (1991) NUMERICAL MODELLING OF CVD PROCESSES AND EQUIPMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991201
CRAWFORD, W. W., ZUBER, J. R., KNOLLE, W. R. (1991) USE OF THE HAZOP ANALYSIS FOR EVALUATION OF CVD REACTORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991256
MITURA, S. F. (1991) ELECTRON SIGNIFICANCE TO DIAMOND SYNTHESIS IN PLASMA ENHANCED CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912113
BRENNFLECK, K., REICH, H. (1991) CVD OF SiC IN LARGE COATING VESSELS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991257
WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
McNEILL, D. W., LIANG, Y., MONTGOMERY, J. H., GAMBLE, H. S., ARMSTRONG, B. M. (1991) EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991291
RIE, K.-T., WÖHLE, J., GEBAUER, A. (1991) PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991248
MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
 
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