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LECOHIER, B., PHILIPPOZ, J.-M., CALPINI, B., STUMM, T., VAN DEN BERGH, H. (1991) THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991234

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Reference TypeJournal (article/letter/editorial)
TitleTHE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER
JournalLe Journal de Physique IV
AuthorsLECOHIER, B.Author
PHILIPPOZ, J.-M.Author
CALPINI, B.Author
STUMM, T.Author
VAN DEN BERGH, H.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991234Search in ResearchGate
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Mindat Ref. ID10295524Long-form Identifiermindat:1:5:10295524:0
GUID0
Full ReferenceLECOHIER, B., PHILIPPOZ, J.-M., CALPINI, B., STUMM, T., VAN DEN BERGH, H. (1991) THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991234
Plain TextLECOHIER, B., PHILIPPOZ, J.-M., CALPINI, B., STUMM, T., VAN DEN BERGH, H. (1991) THE INFLUENCE OF WATER VAPOR ON THE SELECTIVE LOW PRESSURE CVD OF COPPER. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991234
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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Lecohier, B., Calpini, B., Philippoz, J.‐M., Stumm, T., van den Bergh, H. (1992) Selective low pressure chemical vapor deposition of copper: Effect of added water vapor in hydrogen or helium carrier gas. Applied Physics Letters, 60 (25). 3114-3116 doi:10.1063/1.106769
Lecohier, B., Calpini, B., Philippoz, J.‐M., van den Bergh, H. (1992) Low‐pressure chemical vapor deposition of copper: Dependence of the selectivity on the water vapor added to a hydrogen or helium carrier gas. Journal of Applied Physics, 72 (5). 2022-2026 doi:10.1063/1.351630
OKOLI, S., HAUBNER, R., LUX, B. (1991) INFLUENCE OF THE FILAMENT MATERIAL ON LOW-PRESSURE HOT-FILAMENT CVD DIAMOND DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912111
HAMMADI, Z., LECOHIER, B., CROS, A., DALLAPORTA, H. (1993) Formation of CVD copper films investigated by surface analysis and reflectivity. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993311
DANZINGER, M., PENG, J., HAUBNER, R., LUX, B. (1991) INFLUENCE OF CH4 AND Ar ON THE MORPHOLOGIES OF Al2O3 - CVD COATINGS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991268
WISNIEWSKI, B., DURAND, J., COT, L. (1991) COPPER AND COPPER OXIDE THIN FILMS OBTAINED BY METALORGANIC MICROWAVE PLASMA CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991247
DANZINGER, M., HAUBNER, R., LUX, B. (1991) INFLUENCE OF ETCHING THE TiC UNDERLAYER WITH CH4/AlCl3/H2 ON THE CVD FORMATION OF KAPPA-Al2O3. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991269
GRABIEC, P. B., LYSKO, J. M. (1991) MICROENGINEERING - THE NEW APPLICATION OF CHEMICAL VAPOR DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912107
CHOY, K.-L., DERBY, B. (1991) THE CVD OF TiB2 PROTECTIVE COATING ON SiC MONOFILAMENT FIBRES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991284
de BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R. (1991) NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991227
McNEILL, D. W., LIANG, Y., MONTGOMERY, J. H., GAMBLE, H. S., ARMSTRONG, B. M. (1991) EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991291
 
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