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MATSUKATA, M., ODAGIRI, T., KOJIMA, T. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991259

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Reference TypeJournal (article/letter/editorial)
TitleCHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR
JournalLe Journal de Physique IV
AuthorsMATSUKATA, M.Author
ODAGIRI, T.Author
KOJIMA, T.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991259Search in ResearchGate
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Mindat Ref. ID10295549Long-form Identifiermindat:1:5:10295549:3
GUID0
Full ReferenceMATSUKATA, M., ODAGIRI, T., KOJIMA, T. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991259
Plain TextMATSUKATA, M., ODAGIRI, T., KOJIMA, T. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991259
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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These are possibly similar items as determined by title/reference text matching only.

KIMURA, T., KOJIMA, T. (1991) NUMERICAL MODEL OF A FLUIDIZED BED REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION-ESTIMATION OF CVD AND FINES FORMATION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991212
KOJIMA, T., MATSUKATA, M., ARAO, M., NAKAMURA, M., MITSUYOSHI, Y. (1991) DEVELOPMENT OF A PLASMA JETTING FLUIDIZED BED REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991252
KOJIMA, T., MORISAWA, O. (1991) OPTIMUM PROCESS CONDITIONS FOR STABLE AND EFFECTIVE OPERATION OF A FLUIDIZED BED CVD REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991258
RUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297
KITTLER, M., LÄRZ, J., MORGENSTERN, G., SEIFERT, W. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC. Le Journal de Physique IV, 1. doi:10.1051/jp4:1991626
Kojima, T., Kimura, T., Matsukata, M. (1990) Development of numerical model for reactions in fluidized bed grid zone-application to chemical vapor deposition of polycrystalline silicon by monosilane pyrolysis-. Chemical Engineering Science, 45 (8). 2527-2534 doi:10.1016/0009-2509(90)80138-5
ICHIJO, S., TAMURA, K., TAKANO, T., NAKAO, A., HIRAHARA, T. (1991) PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991261
MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
HAMMOND, M. L. (1991) CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991255
SASAKI, M., OHKUBO, A., HIRAI, T. (1991) GAS FLOW SIMULATION OF CHEMICAL VAPOUR INFILTRATION IN A VERTICAL HOT-WALL REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991215
RIE, K.-T., WÖHLE, J., GEBAUER, A. (1991) PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991248
 
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