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ICHIJO, S., TAMURA, K., TAKANO, T., NAKAO, A., HIRAHARA, T. (1991) PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991261

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Reference TypeJournal (article/letter/editorial)
TitlePROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS
JournalLe Journal de Physique IV
AuthorsICHIJO, S.Author
TAMURA, K.Author
TAKANO, T.Author
NAKAO, A.Author
HIRAHARA, T.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991261Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10295551Long-form Identifiermindat:1:5:10295551:6
GUID0
Full ReferenceICHIJO, S., TAMURA, K., TAKANO, T., NAKAO, A., HIRAHARA, T. (1991) PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991261
Plain TextICHIJO, S., TAMURA, K., TAKANO, T., NAKAO, A., HIRAHARA, T. (1991) PROPERTIES AND PRACTICAL RESULTS OF TUNGSTEN CARBIDE COATING PRODUCED BY LOW TEMPERATURE CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991261
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

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BRENNFLECK, K., REICH, H. (1991) CVD OF SiC IN LARGE COATING VESSELS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991257
RUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297
MATSUKATA, M., ODAGIRI, T., KOJIMA, T. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991259
MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
CHOY, K.-L., DERBY, B. (1991) THE CVD OF TiB2 PROTECTIVE COATING ON SiC MONOFILAMENT FIBRES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991284
RIE, K.-T., WÖHLE, J., GEBAUER, A. (1991) PLASMA ASSISTED CVD USING METALLO-ORGANIC COMPOUNDS AS PRECURSORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991248
PORAT, R. (1991) CVD COATING OF CERAMIC LAYERS ON CERAMIC CUTTING TOOL MATERIALS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991265
MITURA, S. F. (1991) ELECTRON SIGNIFICANCE TO DIAMOND SYNTHESIS IN PLASMA ENHANCED CVD PROCESS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912113
GESHEVA, K. A., ABROSIMOVA, V., BESHKOV, G. D. (1991) CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912103
KOJIMA, T., MORISAWA, O. (1991) OPTIMUM PROCESS CONDITIONS FOR STABLE AND EFFECTIVE OPERATION OF A FLUIDIZED BED CVD REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991258
Oshika, T., Nishiyama, A., Nakaso, K., Shimada, M., Okuyama, K. (1999) Unveiling the magic of H2S on the CVD-Al2O3 coating. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998110
 
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