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LOUMAGNE, F., LANGLAIS, F., NASLAIN, R. (1993) Kinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993373

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Reference TypeJournal (article/letter/editorial)
TitleKinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor
JournalLe Journal de Physique IV
AuthorsLOUMAGNE, F.Author
LANGLAIS, F.Author
NASLAIN, R.Author
Year1993 (August)Volume3
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1993373Search in ResearchGate
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Mindat Ref. ID10296083Long-form Identifiermindat:1:5:10296083:1
GUID0
Full ReferenceLOUMAGNE, F., LANGLAIS, F., NASLAIN, R. (1993) Kinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993373
Plain TextLOUMAGNE, F., LANGLAIS, F., NASLAIN, R. (1993) Kinetic laws of the chemical process in the CVD of SiC ceramics from CH3SiCl3-H2 precursor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993373
In(n.d.) Le Journal de Physique IV Vol. 3. EDP Sciences

See Also

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Langlais, F., Loumagne, F., Lespiaux, D., Schamm, S., Naslain, R. (1995) Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995510
Lavenac, J., Langlais, F., Bourrat, X., Naslain, R. (2001) Deposition process of laminar pyrocarbon from propane. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013127
Loumagne, F., Langlais, F., Naslain, R. (1995) Experimental kinetic study of the chemical vapour deposition of SiC-based ceramics from gas precursor. Journal of Crystal Growth, 155 (3). 198-204 doi:10.1016/0022-0248(95)00180-8
Loumagne, F., Langlais, F., Naslain, R. (1995) Reactional mechanisms of the chemical vapour deposition of SiC-based ceramics from gas precursor. Journal of Crystal Growth, 155 (3). 205-213 doi:10.1016/0022-0248(95)00181-6
MALINE, M., TEYSSANDIER, F., HILLEL, R. (1993) SiC-TiSi2 materials codeposited by CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993379
PROUHET, S., GUETTE, A., LANGLAIS, F. (1991) AN EXPERIMENTAL KINETIC STUDY OF BORON NITRIDE CVD FROM BF3-NH3-Ar MIXTURES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991214
COUDERC, J.-P. (1993) CVD process engineering : modelling aspects. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993301
STUKE, M. (1993) Laser applications in CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993369
Hamacha, R., Nardou, F. (1993) Article. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993957
Brennfleck, K., Schneweis, S., Weiss, R. (1999) In-situ-spectroscopic monitoring for SIC-CVD process control. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998130
SLIFIRSKI, J., TEYSSANDIER, F. (1993) Titanium carbide and titanium carbonitride obtained by chemical vapor deposition from orgranometallic precursor in the range 450-800°C. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993350
 
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