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Andrieux, M., Badie, J. M., Bisch, C., Ducarroir, M., Teyssandier, F. (1995) Optical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995572

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Reference TypeJournal (article/letter/editorial)
TitleOptical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition
JournalLe Journal de Physique IV
AuthorsAndrieux, M.Author
Badie, J. M.Author
Bisch, C.Author
Ducarroir, M.Author
Teyssandier, F.Author
Year1995 (June)Volume5
PublisherEDP Sciences
DOIdoi:10.1051/jphyscol:1995572Search in ResearchGate
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Mindat Ref. ID10298345Long-form Identifiermindat:1:5:10298345:8
GUID0
Full ReferenceAndrieux, M., Badie, J. M., Bisch, C., Ducarroir, M., Teyssandier, F. (1995) Optical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995572
Plain TextAndrieux, M., Badie, J. M., Bisch, C., Ducarroir, M., Teyssandier, F. (1995) Optical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995572
In(n.d.) Le Journal de Physique IV Vol. 5. EDP Sciences

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