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Thomas, L., Badie, J. M., Tomasella, E., Ducarroir, M., Berjoan, R. (2001) Low frequency PACVD of silicon-carbon alloys : Process study. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013103

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Reference TypeJournal (article/letter/editorial)
TitleLow frequency PACVD of silicon-carbon alloys : Process study
JournalLe Journal de Physique IV
AuthorsThomas, L.Author
Badie, J. M.Author
Tomasella, E.Author
Ducarroir, M.Author
Berjoan, R.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:20013103Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302009Long-form Identifiermindat:1:5:10302009:1
GUID0
Full ReferenceThomas, L., Badie, J. M., Tomasella, E., Ducarroir, M., Berjoan, R. (2001) Low frequency PACVD of silicon-carbon alloys : Process study. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013103
Plain TextThomas, L., Badie, J. M., Tomasella, E., Ducarroir, M., Berjoan, R. (2001) Low frequency PACVD of silicon-carbon alloys : Process study. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013103
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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DUCARROIR, M., ZHANG, W., BERJOAN, R. (1993) SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993333
LELOGEAIS, M., DUCARROIR, M., BERJOAN, R. (1991) ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991272
ZHANG, W., LELOGEAIS, M., DUCARROIR, M. (1991) KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991246
Berjoan, R., Biche, E., Perarnau, D., Roualdes, S., Durand, J. (1999) XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomers. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998132
Vamvakas, V. Em., Berjoan, R., Schamm, S., Davazoglou, D., Vahlas, C. (2001) Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001329
Stoiler, M., Fontano, G., Panzenböck, M., Mitterer, C., Lugmair, C., Kullmer, R. (2001) Wear behavior of PACVD tin coatings deposited onto tool steels. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013111
Andrieux, M., Badie, J. M., Bisch, C., Ducarroir, M., Teyssandier, F. (1995) Optical Emission Analysis of a Si(CH3)4-Argon Radio Frequency Plasma for SiC Films Deposition. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995572
AGULLO, J. M., DUCARROIR, M., CLEMENDOT, F., LINA, A. (1993) Si-C films on alloys : characterization of ageing behavior in air. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993320
Cassell, A., Delzeit, L., Nguyen, C., Stevens, R., Han, J., Meyyappan, M. (2001) Carbon nanotubes by CVD and applications. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001351
Berjoan, R., Perarnau, D., Caussat, B. (1999) XPS study of CVD silicon thin films deposited on various substrates from SiH4 gaseous precursor. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998142
HENRY, F., ARMAS, B., BALAT, M., BERJOAN, R., COMBESCURE, C. (1993) A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993372
 
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