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Liu, W. C., Cheng, S. Y., Pan, H. J., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H. (1999) A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998144

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Reference TypeJournal (article/letter/editorial)
TitleA new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD
JournalLe Journal de Physique IV
AuthorsLiu, W. C.Author
Cheng, S. Y.Author
Pan, H. J.Author
Chen, J. Y.Author
Wang, W. C.Author
Feng, S. C.Author
Yu, K. H.Author
Year1999 (September)Volume9
PublisherEDP Sciences
DOIdoi:10.1051/jp4:19998144Search in ResearchGate
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Mindat Ref. ID10301029Long-form Identifiermindat:1:5:10301029:0
GUID0
Full ReferenceLiu, W. C., Cheng, S. Y., Pan, H. J., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H. (1999) A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998144
Plain TextLiu, W. C., Cheng, S. Y., Pan, H. J., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H. (1999) A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998144
In(n.d.) Le Journal de Physique IV Vol. 9. EDP Sciences

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Liu, W. C., Pan, H. J., Cheng, S. Y., Wang, W. C., Chen, J. Y., Feng, S. C., Yu, K. H. (1999) MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998145
Liu, W. C., Chang, W. L., Pan, H. J., Chen, J. Y., Wang, W. C., Yu, K. H., Feng, S. C. (1999) High breakdown n+-GaAs/δ-doped(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998146
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Liu, W.-C., Wang, W.-C., Yen, C.-H., Cheng, C.-C., Wu, C.-Z., Chiou, W.-H., Chuen, C.-Y. (2001) A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013120
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