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Liu, W.-C., Pan, H.-J., Yen, C.-H., Lin, K.-P., Wu, C.-Z., Chiou, W.-H., Chen, C.-Y. (2001) MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013116

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Reference TypeJournal (article/letter/editorial)
TitleMOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
JournalLe Journal de Physique IV
AuthorsLiu, W.-C.Author
Pan, H.-J.Author
Yen, C.-H.Author
Lin, K.-P.Author
Wu, C.-Z.Author
Chiou, W.-H.Author
Chen, C.-Y.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:20013116Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302023Long-form Identifiermindat:1:5:10302023:7
GUID0
Full ReferenceLiu, W.-C., Pan, H.-J., Yen, C.-H., Lin, K.-P., Wu, C.-Z., Chiou, W.-H., Chen, C.-Y. (2001) MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013116
Plain TextLiu, W.-C., Pan, H.-J., Yen, C.-H., Lin, K.-P., Wu, C.-Z., Chiou, W.-H., Chen, C.-Y. (2001) MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013116
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Liu, W.-C., Wang, W.-C., Yen, C.-H., Cheng, C.-C., Wu, C.-Z., Chiou, W.-H., Chuen, C.-Y. (2001) A systematic study of MOCVD grown InP/InGaAIAs heterojunction bipolar transistors with anomalous switching behavior. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013120
Liu, W. C., Pan, H. J., Cheng, S. Y., Wang, W. C., Chen, J. Y., Feng, S. C., Yu, K. H. (1999) MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998145
Liu, W.-C., Yu, K.-H., Lin, K.-W., Lin, K.-P., Yen, C.-H., Cheng, C.-C., Wang, C.-K., Chuang, H.-M. (2001) MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013119
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Liu, W. C., Chang, W. L., Pan, H. J., Chen, J. Y., Wang, W. C., Yu, K. H., Feng, S. C. (1999) High breakdown n+-GaAs/δ-doped(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998146
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LUO, W., REN, P., TAN, C., TAN, Z. (1991) STUDIES OF In2O3 - Sn FILMS GROWN BY MOCVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912116
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