Reference Type | Journal (article/letter/editorial) |
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Title | Elementary steps and application of the CVD of SiC/BN double layers |
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Journal | Le Journal de Physique IV |
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Authors | Hemeltjen, S. | Author |
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Heinrich, J. | Author |
Marx, G. | Author |
Dietrich, D. | Author |
Nestler, K. | Author |
Weise, K. | Author |
Stöckel, S. | Author |
Year | 2001 (August) | Volume | 11 |
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Publisher | EDP Sciences |
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DOI | doi:10.1051/jp4:2001310Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 10302005 | Long-form Identifier | mindat:1:5:10302005:3 |
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GUID | 0 |
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Full Reference | Hemeltjen, S., Heinrich, J., Marx, G., Dietrich, D., Nestler, K., Weise, K., Stöckel, S. (2001) Elementary steps and application of the CVD of SiC/BN double layers. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001310 |
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Plain Text | Hemeltjen, S., Heinrich, J., Marx, G., Dietrich, D., Nestler, K., Weise, K., Stöckel, S. (2001) Elementary steps and application of the CVD of SiC/BN double layers. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001310 |
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In | (n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences |
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