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Zambov, L. M., Ivanov, B., Popov, C., Georgiev, G., Stoyanov, I., Dimitrov, D. B. (2001) Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013126

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition
JournalLe Journal de Physique IV
AuthorsZambov, L. M.Author
Ivanov, B.Author
Popov, C.Author
Georgiev, G.Author
Stoyanov, I.Author
Dimitrov, D. B.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:20013126Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302034Long-form Identifiermindat:1:5:10302034:3
GUID0
Full ReferenceZambov, L. M., Ivanov, B., Popov, C., Georgiev, G., Stoyanov, I., Dimitrov, D. B. (2001) Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013126
Plain TextZambov, L. M., Ivanov, B., Popov, C., Georgiev, G., Stoyanov, I., Dimitrov, D. B. (2001) Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013126
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Zambov, L., Ivanov, B., Georgiev, G., Popov, C., Vassilev, V., Beshkov, G. (1999) Low pressure chemical vapour deposition of CNx layers by interaction between tetramethylguanidine and cyanurchloride. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999863
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