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Hammad, A., Amanatides, E., Rapakoulias, D. E., Mataras, D. (2001) Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001398

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Reference TypeJournal (article/letter/editorial)
TitleEffect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges
JournalLe Journal de Physique IV
AuthorsHammad, A.Author
Amanatides, E.Author
Rapakoulias, D. E.Author
Mataras, D.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:2001398Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302145Long-form Identifiermindat:1:5:10302145:6
GUID0
Full ReferenceHammad, A., Amanatides, E., Rapakoulias, D. E., Mataras, D. (2001) Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001398
Plain TextHammad, A., Amanatides, E., Rapakoulias, D. E., Mataras, D. (2001) Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001398
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Amanatides, E., Rapakoulias, D. E., Mataras, D. (2001) Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin films. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001390
Amanatides, E., Mataras, D., Rapakoulias, D. E. (2001) Effect of frequency in the deposition of microcrystalline silicon from silane discharges. Journal of Applied Physics, 90 (11). 5799-5807 doi:10.1063/1.1413240
Dimitrakellis, P, Amanatides, E, Mataras, D, Rapakoulias, D E (2011) Development of a hollow cathode plasma source for microcrystalline silicon thin films deposition. Journal of Physics: Conference Series, 275. 12014pp. doi:10.1088/1742-6596/275/1/012014
Lyka, B, Amanatides, E, Mataras, D, Rapakoulias, D E (2005) Power consumption effect on the microcrystalline silicon deposition process: a comparison between model and experimental results. Journal of Physics: Conference Series, 10. 198-201 doi:10.1088/1742-6596/10/1/049
Amanatides, E., Hammad, A., Katsia, E., Mataras, D. (2005) High pressure regime of plasma enhanced deposition of microcrystalline silicon. Journal of Applied Physics, 97 (7). 73303pp. doi:10.1063/1.1866477
Papakonstantinou, D. D., Mataras, D., Arefi-Khonsari, (2001) Treatment of polyethylene terephthalate in a He glow discharge. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001345
Davazoglou, D., Kouvatsos, D. N., Valamontes, E. (2001) Influence of texture on the absorption threshold of LPCVD silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013129
Amanatides, E., Stamou, S., Mataras, D. (2001) Gas phase and surface kinetics in plasma enhanced chemical vapor deposition of microcrystalline silicon: The combined effect of rf power and hydrogen dilution. Journal of Applied Physics, 90 (11). 5786-5798 doi:10.1063/1.1413241
Fribourg-Blanc, E., Cattan, E., Remiens, D., Dupont, M., Osmont, D. (2001) rf-sputtering of PMNT thin films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20011123
Farsari, E, Kalampounias, A G, Amanatides, E, Mataras, D (2014) ECWR plasma enhanced chemical vapour deposition of microcrystalline silicon thin films. Journal of Physics: Conference Series, 550. 12031pp. doi:10.1088/1742-6596/550/1/012031
Lee, J.-H., Yang, W.-Y., Rhee, S.-W., Kim, D. (2001) Effect of the precursors on the deposition of (Ba, Sr)TIO3 films. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001327
 
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