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Davazoglou, D., Kouvatsos, D. N., Valamontes, E. (2001) Influence of texture on the absorption threshold of LPCVD silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013129

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of texture on the absorption threshold of LPCVD silicon films
JournalLe Journal de Physique IV
AuthorsDavazoglou, D.Author
Kouvatsos, D. N.Author
Valamontes, E.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:20013129Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302037Long-form Identifiermindat:1:5:10302037:4
GUID0
Full ReferenceDavazoglou, D., Kouvatsos, D. N., Valamontes, E. (2001) Influence of texture on the absorption threshold of LPCVD silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013129
Plain TextDavazoglou, D., Kouvatsos, D. N., Valamontes, E. (2001) Influence of texture on the absorption threshold of LPCVD silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013129
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Kouvatsos, D. N., Vamvakas, V. Em., Davazoglou, D. (2001) Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013130
Kovalgin, A., Holleman, J. (2001) A study of morphology and texture of LPCVD germanium-silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001306
Davazoglou, D. (1999) Initial stages of growth of LPCVD polysilicon films. Effect of the surface "ageing". Le Journal de Physique IV, 9. doi:10.1051/jp4:19998112
Bercu, M., Cobianu, C., Modreanu, M., Bercu, B. N. (2001) Characterisation of LPCVD silicon oxynitride films by optical spectroscopy. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013121
Gleizes, A. N., Vidal, S., Davazoglou, D. (2001) Fabrication of fine copper lines on AZ 5214TM patterned silicon substrates by selective chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013151
Davazoglou, D. (1999) Optical properties of ultra-thin low pressure chemically vapor deposited silicon films. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998134
Magoulianti, E., Beltsios, K., Davazoglou, D., Kanellopoulos, N. (2001) CVD modifications of porous Vycor silica for gas separation and sensor applications. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013150
Vamvakas, V. Em., Berjoan, R., Schamm, S., Davazoglou, D., Vahlas, C. (2001) Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001329
Alexandrov, S. E., Chistiakov, V. A. (2001) Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complex. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001319
Minkina, V. G. (2001) Heat and mass transfer during producing silicon layers by chloride LPCVD process. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001321
Hammad, A., Amanatides, E., Rapakoulias, D. E., Mataras, D. (2001) Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane discharges. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001398
 
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