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Minkina, V. G. (2001) Heat and mass transfer during producing silicon layers by chloride LPCVD process. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001321

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Reference TypeJournal (article/letter/editorial)
TitleHeat and mass transfer during producing silicon layers by chloride LPCVD process
JournalLe Journal de Physique IV
AuthorsMinkina, V. G.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:2001321Search in ResearchGate
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Mindat Ref. ID10302068Long-form Identifiermindat:1:5:10302068:8
GUID0
Full ReferenceMinkina, V. G. (2001) Heat and mass transfer during producing silicon layers by chloride LPCVD process. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001321
Plain TextMinkina, V. G. (2001) Heat and mass transfer during producing silicon layers by chloride LPCVD process. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001321
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Kovalgin, A., Holleman, J. (2001) A study of morphology and texture of LPCVD germanium-silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001306
Bercu, M., Cobianu, C., Modreanu, M., Bercu, B. N. (2001) Characterisation of LPCVD silicon oxynitride films by optical spectroscopy. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013121
Levesque, A., Bouteville, A. (2001) Investigation of the tantalum chlorination with hydrogen chloride for LPCVD tantalum elaboration. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013113
Alexandrov, S. E., Chistiakov, V. A. (2001) Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complex. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001319
Davazoglou, D., Kouvatsos, D. N., Valamontes, E. (2001) Influence of texture on the absorption threshold of LPCVD silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013129
Alexandrov, S. E., Kriakin, V. A. (2001) Kinetics of LPCVD of gallium nitride and oxynitride films based on pyrolysis of a gallium chloride complex with ammonia GaCl3NH3. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001317
Cobianu, B., Modreanu, M., Danila, M., Gavrila, R., Bercu, M., Gartner, M. (2001) Structural and morphological changes in low temperature annealed LPCVD Si layers. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001340
de LEGÉ, L. J., HENDRIKS, M. (1991) CHARACTERIZATION AND OPTIMIZATION OF THE LPCVD SILICON OXYNITRIDE PROCESS, USING THE DESIGN OF EXPERIMENTS METHOD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991205
Kleps, I., Angelescu, A. (1999) LPCVD amorphous silicon carbide films, properties and microelectronics applications. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998139
LABATUT, C., COMBESCURE, C., ARMAS, B. (1993) LPCVD of Al2O3 layers using a hot-wall reactor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993381
Dollet, A., Caussat, B. (2000) Prediction of LPCVD silicon film structure using combined experimental and numerical analyses. Le Journal de Physique IV, 10. doi:10.1051/jp4:2000201
 
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