Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Kleps, I., Angelescu, A. (1999) LPCVD amorphous silicon carbide films, properties and microelectronics applications. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998139

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleLPCVD amorphous silicon carbide films, properties and microelectronics applications
JournalLe Journal de Physique IV
AuthorsKleps, I.Author
Angelescu, A.Author
Year1999 (September)Volume9
PublisherEDP Sciences
DOIdoi:10.1051/jp4:19998139Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10301023Long-form Identifiermindat:1:5:10301023:8
GUID0
Full ReferenceKleps, I., Angelescu, A. (1999) LPCVD amorphous silicon carbide films, properties and microelectronics applications. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998139
Plain TextKleps, I., Angelescu, A. (1999) LPCVD amorphous silicon carbide films, properties and microelectronics applications. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998139
In(n.d.) Le Journal de Physique IV Vol. 9. EDP Sciences

See Also

These are possibly similar items as determined by title/reference text matching only.

Temple-Boyer, P., de Mauduit, B., Caussat, B., Couderc, J. P. (1999) Correlations between stress and microstructure into LPCVD silicon films. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998138
Olivares, J., Sangrador, J., Rodríguez, A., Rodríguez, T. (1999) Amorphous SiGe deposition by LPCVD from Si2H6 and GeH4 precursors. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999839
de Mauduit, B., Bourgerette, C., Paillard, V., Puech, P., Caussat, B. (1999) Structure of mixed-phase LPCVD silicon films as a function of operating conditions. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998136
Kovalgin, A., Holleman, J. (2001) A study of morphology and texture of LPCVD germanium-silicon films. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001306
Davazoglou, D. (1999) Initial stages of growth of LPCVD polysilicon films. Effect of the surface "ageing". Le Journal de Physique IV, 9. doi:10.1051/jp4:19998112
Kosinova, M. L., Fainer, N. I., Rumyantsev, Yu. M., Golubenko, A. N., Kuznetsov, F. A. (1999) LPCVD boron carbonitride films from triethylamine borane. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998115
Davazoglou, D. (1999) Optical properties of ultra-thin low pressure chemically vapor deposited silicon films. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998134
Dollet, A., Caussat, B., Couderc, J. P. (1999) Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999822
Hitchman, M. L., Zhao, J. (1999) The LPCVD of rutile at low temperatures. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999844
LELOGEAIS, M., DUCARROIR, M., BERJOAN, R. (1991) ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991272
Grady, D. E. (1994) Shock-wave strength properties of boron carbide and silicon carbide. Le Journal de Physique IV, 4. doi:10.1051/jp4:1994859
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 30, 2025 22:17:44
Go to top of page