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LABATUT, C., COMBESCURE, C., ARMAS, B. (1993) LPCVD of Al2O3 layers using a hot-wall reactor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993381

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Reference TypeJournal (article/letter/editorial)
TitleLPCVD of Al2O3 layers using a hot-wall reactor
JournalLe Journal de Physique IV
AuthorsLABATUT, C.Author
COMBESCURE, C.Author
ARMAS, B.Author
Year1993 (August)Volume3
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1993381Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10296091Long-form Identifiermindat:1:5:10296091:6
GUID0
Full ReferenceLABATUT, C., COMBESCURE, C., ARMAS, B. (1993) LPCVD of Al2O3 layers using a hot-wall reactor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993381
Plain TextLABATUT, C., COMBESCURE, C., ARMAS, B. (1993) LPCVD of Al2O3 layers using a hot-wall reactor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993381
In(n.d.) Le Journal de Physique IV Vol. 3. EDP Sciences

See Also

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HENRY, F., MARTI, P., CASAUX, Y., COMBESCURE, C., FIGUERAS, A., MADIGOU, V., RODRIGUEZ-CLEMENTE, R., MAZEL, A., SEVELY, J., ARMAS, B. (1993) LPCVD of SiC layers in a hot-wall reactor using TMS precursor. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993345
CHEHOUANI, H., BENET, S., ARMAS, B., COMBESCURE, C., FIGUERAS, A., GARELIK, S. (1993) Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993316
HENRY, F., ARMAS, B., BALAT, M., BERJOAN, R., COMBESCURE, C. (1993) A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993372
Armas, B., de Icaza Herrera, M., Combescure, C., Sibieude, F., Thenegal, D. (1999) Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999849
CHEHOUANI, H., ARMAS, B., COMBESCURE, C., BENET, S ., BRUNET, S. (1991) EXPERIMENTAL STUDY AND NUMERICAL SIMULATION OF HYDRODYNAMICS AND HEAT TRANSFER IN A COLD-WALL CVD REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991221
FIGUERAS, A., RODRIGUEZ-CLEMENTE, R., GARELIK, S., SANTISO, J., ARMAS, B ., COMBESCURE, C., MAZEL, A., KIHN, Y., SÉVELY, J. (1991) INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991228
ASPAR, B., ARMAS, B., COMBESCURE, C., THENEGAL, D. (1991) CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991280
Henry, F., Armas, B., Combescure, C., Thenegal, D., Flamand, R. (1995) Chemical Vapour Deposition of AIN-Si3N4 Codeposits. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995593
CHEHOUANI, H., BENET, S., BRUNET, S., ARMAS, B. (1993) Heat transfer studies in cold CVD reactors using holographic interferometry. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993310
Schierling, M., Zimmermann, E., Neuschütz, D. (1999) Deposition kinetics of Al2O3 from AlCl3-CO2-H2-HCl gas mixtures by thermal CVD in a hot-wall reactor. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999811
FAKIH, C., BES, R. S., ARMAS, B., THENEGAL, D. (1991) PLASMA DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991250
 
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