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Müller, E., Nissen, H.-U., Ospelt, M., von Känel, H. (1989) Chemical ordering and boundary structure in strained-layer Si-Ge superlattices. Physical Review Letters, 63 (17). 1819-1822 doi:10.1103/physrevlett.63.1819

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Reference TypeJournal (article/letter/editorial)
TitleChemical ordering and boundary structure in strained-layer Si-Ge superlattices
JournalPhysical Review Letters
AuthorsMüller, E.Author
Nissen, H.-U.Author
Ospelt, M.Author
von Känel, H.Author
Year1989 (October 23)Volume63
Issue17
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.63.1819Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10551470Long-form Identifiermindat:1:5:10551470:3
GUID0
Full ReferenceMüller, E., Nissen, H.-U., Ospelt, M., von Känel, H. (1989) Chemical ordering and boundary structure in strained-layer Si-Ge superlattices. Physical Review Letters, 63 (17). 1819-1822 doi:10.1103/physrevlett.63.1819
Plain TextMüller, E., Nissen, H.-U., Ospelt, M., von Känel, H. (1989) Chemical ordering and boundary structure in strained-layer Si-Ge superlattices. Physical Review Letters, 63 (17). 1819-1822 doi:10.1103/physrevlett.63.1819
In(1989, October) Physical Review Letters Vol. 63 (17) American Physical Society (APS)

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von Känel, H., Müller, E., Nissen, H.-U., Bacsa, W., Ospelt, M., Mäder, K.A., Stalder, R., Baldereschi, A. (1991) Silicon heteroepitaxy: interface structure and physical properties. Journal of Crystal Growth, 111 (1). 889-896 doi:10.1016/0022-0248(91)91102-g
Sutter, P., Schwarz, C., Müller, E., Zelezny, V., Goncalves‐Conto, S., von Känel, H. (1994) Magnetron sputter epitaxy of SimGen/Si(001) strained‐layer superlattices. Applied Physics Letters, 65 (17). 2220-2222 doi:10.1063/1.112766
Pearsall, T. P., Vandenberg, J. M., Hull, R., Bonar, J. M. (1989) Structure and Optical Properties of Strained Ge-Si Superlattices Grown on (001) Ge. Physical Review Letters, 63 (24). 2696 doi:10.1103/physrevlett.63.2696
Pearsall, T. P., Vandenberg, J. M., Hull, R., Bonar, J. M. (1989) Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge. Physical Review Letters, 63 (19). 2104-2107 doi:10.1103/physrevlett.63.2104
Zachai, R., Eberl, K., Abstreiter, G., Kasper, E., Kibbel, H. (1990) Photoluminescence in short-period Si/Ge strained-layer superlattices. Physical Review Letters, 64 (9). 1055-1058 doi:10.1103/physrevlett.64.1055
Henz, J., Ospelt, M., Von Känel, H. (1989) Growth and characterization of metal/semiconductor superlattices. Surface Science Letters, 211. doi:10.1016/0167-2584(89)90381-2
Rastelli, A., Kummer, M., von Känel, H. (2001) Reversible Shape Evolution of Ge Islands on Si(001). Physical Review Letters, 87 (25). doi:10.1103/physrevlett.87.256101
Henz, J., Ospelt, M., Von Känel, H. (1989) Growth and characterization of metal/semiconductor superlattices. Surface Science, 211. 716-723 doi:10.1016/0039-6028(89)90833-9
Müller, E., Grindatto, D. P., Nissen, H. ‐U., Onda, N., von Känel, H. (1994) High‐resolution transmission electron microscopic study of the γ‐FeSi2/Si(111) interface. Applied Physics Letters, 64 (15). 1938-1940 doi:10.1063/1.111748
Mendik, M., Ospelt, M., von Känel, H., Wachter, P. (1991) Determination of elastic properties of Si/Ge superlattices and Si1-xGex films from surface acoustic modes by Brillouin scattering. Applied Surface Science, 50. 303-307 doi:10.1016/0169-4332(91)90187-o
Nissen, H.-U., Müller, E., Deller, H. R., Von Känel, H. (1995) TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy. physica status solidi (a), 150 (1). 395-406 doi:10.1002/pssa.2211500135
 
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