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von Känel, H., Müller, E., Nissen, H.-U., Bacsa, W., Ospelt, M., Mäder, K.A., Stalder, R., Baldereschi, A. (1991) Silicon heteroepitaxy: interface structure and physical properties. Journal of Crystal Growth, 111 (1). 889-896 doi:10.1016/0022-0248(91)91102-g

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Reference TypeJournal (article/letter/editorial)
TitleSilicon heteroepitaxy: interface structure and physical properties
JournalJournal of Crystal Growth
Authorsvon Känel, H.Author
Müller, E.Author
Nissen, H.-U.Author
Bacsa, W.Author
Ospelt, M.Author
Mäder, K.A.Author
Stalder, R.Author
Baldereschi, A.Author
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)91102-gSearch in ResearchGate
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Mindat Ref. ID2801562Long-form Identifiermindat:1:5:2801562:0
GUID0
Full Referencevon Känel, H., Müller, E., Nissen, H.-U., Bacsa, W., Ospelt, M., Mäder, K.A., Stalder, R., Baldereschi, A. (1991) Silicon heteroepitaxy: interface structure and physical properties. Journal of Crystal Growth, 111 (1). 889-896 doi:10.1016/0022-0248(91)91102-g
Plain Textvon Känel, H., Müller, E., Nissen, H.-U., Bacsa, W., Ospelt, M., Mäder, K.A., Stalder, R., Baldereschi, A. (1991) Silicon heteroepitaxy: interface structure and physical properties. Journal of Crystal Growth, 111 (1). 889-896 doi:10.1016/0022-0248(91)91102-g
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

See Also

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Müller, E., Nissen, H.-U., Ospelt, M., von Känel, H. (1989) Chemical ordering and boundary structure in strained-layer Si-Ge superlattices. Physical Review Letters, 63 (17). 1819-1822 doi:10.1103/physrevlett.63.1819
Onda, N., Sirringhaus, H., Müller, E., von Känel, H. (1993) Structural and electronic properties of pseudomorphic FeSi1+x films on Si(111). Journal of Crystal Growth, 127 (1). 634-637 doi:10.1016/0022-0248(93)90699-w
Von Känel, H., Graf, T., Henz, J., Ospelt, M., Wachter, P. (1987) NiSi2 layers grown on Si (111) by MBE and SPE. Journal of Crystal Growth, 81 (1). 470-475 doi:10.1016/0022-0248(87)90435-0
Schwarz, C., Schärer, U., Sutter, P., Stalder, R., Onda, N., von Känel, H. (1993) Application of epitaxial CoSi2⧸Si⧸CoSi2 heterostructures to tunable Schottky-barrier detectors. Journal of Crystal Growth, 127 (1). 659-662 doi:10.1016/0022-0248(93)90705-2
Onda, N., Henz, J., Müller, E., Mäder, K.A., von Känel, H. (1992) Epitaxy of fluorite-structure silicides: metastable cubic FeSi2 on Si(111). Applied Surface Science, 56. 421-426 doi:10.1016/0169-4332(92)90264-x
Tiwari, A.N., Floeder, W., Blunier, S., Zogg, H., Proctor, M.J. (1991) Heteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers. Journal of Crystal Growth, 111 (1). 730-735 doi:10.1016/0022-0248(91)91071-h
Sutter, P., Müller, E., Tao, S., Schwarz, C., Filzmoser, M., Lenz, M., von Känel, H. (1995) Magnetron sputter epitaxy of heterostructures. Journal of Crystal Growth, 157 (1). 172-176 doi:10.1016/0022-0248(95)00384-3
von Känel, H., Mäder, K. A., Müller, E., Onda, N., Sirringhaus, H. (1992) Structural and electronic properties of metastable epitaxialFeSi1+xfilms on Si(111) Physical Review B, 45 (23) 13807-13810 doi:10.1103/physrevb.45.13807
Chalmers, S.A., Kroemer, H., Gossard, A.C. (1991) The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells. Journal of Crystal Growth, 111 (1). 647-650 doi:10.1016/0022-0248(91)91057-h
Müller, E., Grindatto, D. P., Nissen, H. ‐U., Onda, N., von Känel, H. (1994) High‐resolution transmission electron microscopic study of the γ‐FeSi2/Si(111) interface. Applied Physics Letters, 64 (15). 1938-1940 doi:10.1063/1.111748
Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M., Gunshor, R.L. (1991) Reconstruction structure at Ga2Se3/GaAs epitaxial interface. Journal of Crystal Growth, 111 (1). 1038-1042 doi:10.1016/0022-0248(91)91128-w
 
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