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Freeouf, J. L., Tsang, J. C., LeGoues, F. K., Iyer, S. S. (1990) Spectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers. Physical Review Letters, 64 (3). 315-318 doi:10.1103/physrevlett.64.315

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Reference TypeJournal (article/letter/editorial)
TitleSpectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers
JournalPhysical Review Letters
AuthorsFreeouf, J. L.Author
Tsang, J. C.Author
LeGoues, F. K.Author
Iyer, S. S.Author
Year1990 (January 15)Volume64
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.64.315Search in ResearchGate
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Mindat Ref. ID10552811Long-form Identifiermindat:1:5:10552811:3
GUID0
Full ReferenceFreeouf, J. L., Tsang, J. C., LeGoues, F. K., Iyer, S. S. (1990) Spectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers. Physical Review Letters, 64 (3). 315-318 doi:10.1103/physrevlett.64.315
Plain TextFreeouf, J. L., Tsang, J. C., LeGoues, F. K., Iyer, S. S. (1990) Spectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers. Physical Review Letters, 64 (3). 315-318 doi:10.1103/physrevlett.64.315
In(1990, January) Physical Review Letters Vol. 64 (3) American Physical Society (APS)

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Tsang, J. C., Kesan, V. P., Freeouf, J. L., LeGoues, F. K., Iyer, S. S. (1992) Raman spectroscopy of long-range order in epitaxialSi0.5Ge0.5alloys. Physical Review B, 46 (11) 6907-6914 doi:10.1103/physrevb.46.6907
LeGoues, F. K., Kesan, V. P., Iyer, S. S. (1990) Long-range order in thick, unstrainedSi0.5Ge0.5epitaxial layers. Physical Review Letters, 64 (1). 40-43 doi:10.1103/physrevlett.64.40
Tsang, J. C., Freeouf, J. L., Iyer, S. S. (1992) Localized and nonlocalized states in thin Ge layers grown by molecular-beam epitaxy at low temperatures. Physical Review B, 46 (12) 7755-7764 doi:10.1103/physrevb.46.7755
LeGoues, F. K., Kesan, V. P., Iyer, S. S., Tersoff, J., Tromp, R. (1990) Surface-stress-induced order in SiGe alloy films. Physical Review Letters, 64 (17). 2038-2041 doi:10.1103/physrevlett.64.2038
Iyer, S. S., Eberl, K., Goorsky, M. S., LeGoues, F. K., Tsang, J. C., Cardone, F. (1992) Synthesis of Si1−yCyalloys by molecular beam epitaxy. Applied Physics Letters, 60 (3). 356-358 doi:10.1063/1.106655
Eberl, K., Iyer, S. S., Zollner, S., Tsang, J. C., LeGoues, F. K. (1992) Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system. Applied Physics Letters, 60 (24). 3033-3035 doi:10.1063/1.106774
Tersoff, J., LeGoues, F. K. (1994) Competing relaxation mechanisms in strained layers. Physical Review Letters, 72 (22). 3570-3573 doi:10.1103/physrevlett.72.3570
Tsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558
Powell, A. R., LeGoues, F. K., Iyer, S. S. (1994) Formation of β‐SiC nanocrystals by the relaxation of Si1−yCyrandom alloy layers. Applied Physics Letters, 64 (3). 324-326 doi:10.1063/1.111195
Tsang, J. C., Iyer, S. S., Calise, J. A., Ek, B. A. (1989) Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers. Physical Review B, 40 (8) 5886-5889 doi:10.1103/physrevb.40.5886
Tsang, J. C., Iyer, S. S., Pukite, P., Copel, M. (1989) Nonlocal resonant optical phonons and the local properties of ultrathin Ge layers on Si(100) Physical Review B, 39 (18) 13545-13548 doi:10.1103/physrevb.39.13545
 
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