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Tsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558

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Reference TypeJournal (article/letter/editorial)
TitleDetection and characterization of individual Ge layers in Si(100) using Raman spectroscopy
JournalApplied Physics Letters
AuthorsTsang, J. C.Author
Iyer, S. S.Author
Delage, S. L.Author
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98558Search in ResearchGate
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Mindat Ref. ID8481571Long-form Identifiermindat:1:5:8481571:6
GUID0
Full ReferenceTsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558
Plain TextTsang, J. C., Iyer, S. S., Delage, S. L. (1987) Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy. Applied Physics Letters, 51 (21). 1732-1734 doi:10.1063/1.98558
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

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Iyer, S. S., Tsang, J. C., Copel, M. W., Pukite, P. R., Tromp, R. M. (1989) Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering. Applied Physics Letters, 54 (3). 219-221 doi:10.1063/1.101014
Ming, Z. H., Soo, Y. L., Huang, S., Kao, Y. H., Tsang, J. C., Iyer, S. S. (1994) Interfacial microstructures of ultrathin Ge layers on Si probed by x‐ray scattering and fluorescence yield. Applied Physics Letters, 65 (11). 1382-1384 doi:10.1063/1.113007
Bright, A. A., Iyer, S. S., Robey, S. W., Delage, S. L. (1988) Technique for selective etching of Si with respect to Ge. Applied Physics Letters, 53 (23). 2328-2329 doi:10.1063/1.100269
Tsang, J. C., Eberl, K., Zollner, S., Iyer, S. S. (1992) Raman spectroscopy of CySi1−yalloys grown by molecular beam epitaxy. Applied Physics Letters, 61 (8). 961-963 doi:10.1063/1.107742
Tsang, J. C., Iyer, S. S., Calise, J. A., Ek, B. A. (1989) Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers. Physical Review B, 40 (8) 5886-5889 doi:10.1103/physrevb.40.5886
Tsang, J. C., Iyer, S. S., Pukite, P., Copel, M. (1989) Nonlocal resonant optical phonons and the local properties of ultrathin Ge layers on Si(100) Physical Review B, 39 (18) 13545-13548 doi:10.1103/physrevb.39.13545
Tsang, J. C. (1986) Symmetry forbidden Raman scattering from (100) surfaces of oxidized Si and Ge. Applied Physics Letters, 49 (26). 1796-1798 doi:10.1063/1.97194
Freeouf, J. L., Tsang, J. C., LeGoues, F. K., Iyer, S. S. (1990) Spectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers. Physical Review Letters, 64 (3). 315-318 doi:10.1103/physrevlett.64.315
Iyer, S. S., Delage, S. L., Scilla, G. J. (1988) Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Applied Physics Letters, 52 (6). 486-488 doi:10.1063/1.99420
Delage, S. L., Jeng, S.‐J., Jousse, D., Iyer, S. S. (1988) High conductivity polycrystalline silicon obtained by molecular beam deposition. Applied Physics Letters, 52 (12). 999-1001 doi:10.1063/1.99199
Kuan, T. S., Iyer, S. S. (1991) Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy. Applied Physics Letters, 59 (18). 2242-2244 doi:10.1063/1.106083
 
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