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Bracht, Hartmut, Haller, Eugene E. (2000) Comment on “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects”. Physical Review Letters, 85 (22). 4835 doi:10.1103/physrevlett.85.4835

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Reference TypeJournal (article/letter/editorial)
TitleComment on “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects”
JournalPhysical Review Letters
AuthorsBracht, HartmutAuthor
Haller, Eugene E.Author
Year2000 (November 27)Volume85
Issue22
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevlett.85.4835Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10581104Long-form Identifiermindat:1:5:10581104:8
GUID0
Full ReferenceBracht, Hartmut, Haller, Eugene E. (2000) Comment on “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects”. Physical Review Letters, 85 (22). 4835 doi:10.1103/physrevlett.85.4835
Plain TextBracht, Hartmut, Haller, Eugene E. (2000) Comment on “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects”. Physical Review Letters, 85 (22). 4835 doi:10.1103/physrevlett.85.4835
In(2000, November) Physical Review Letters Vol. 85 (22) American Physical Society (APS)

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Ural, Ant, Griffin, P. B., Plummer, J. D. (1999) Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects. Physical Review Letters, 83 (17). 3454-3457 doi:10.1103/physrevlett.83.3454
Bracht, H., Haller, E. E., Clark-Phelps, R. (1998) Silicon Self-Diffusion in Isotope Heterostructures. Physical Review Letters, 81 (2). 393-396 doi:10.1103/physrevlett.81.393
Sunder, Kirsten, Bracht, Hartmut, Nicols, Samuel P., Haller, Eugene E. (2007) Zinc and gallium diffusion in gallium antimonide. Physical Review B, 75 (24) doi:10.1103/physrevb.75.245210
Bracht, H., Pedersen, J. Fage, Zangenberg, N., Larsen, A. Nylandsted, Haller, E. E., Lulli, G., Posselt, M. (2003) Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures. Physical Review Letters, 91 (24). doi:10.1103/physrevlett.91.245502
Südkamp, Tobias, Bracht, Hartmut (2016) Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to755∘C. Physical Review B, 94 (12) doi:10.1103/physrevb.94.125208
Hong, Daniel C., Stanley, H. Eugene, Jan, Naeem (1984) Comment on "Self-Similarity in Irreversible Kinetic Gelation". Physical Review Letters, 53 (5). 509 doi:10.1103/physrevlett.53.509
Bracht, H., Silvestri, H. H., Sharp, I. D., Haller, E. E. (2007) Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon. Physical Review B, 75 (3) doi:10.1103/physrevb.75.035211
Bracht, H., Stolwijk, N. A., Mehrer, H. (1995) Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions. Physical Review B, 52 (23) 16542-16560 doi:10.1103/physrevb.52.16542
Li, Gang, Sander, L. M., Meakin, Paul (1989) Comment on ‘‘Self-similarity of diffusion-limited aggregates and electrodeposition clusters’’. Physical Review Letters, 63 (12). 1322 doi:10.1103/physrevlett.63.1322
Kube, R., Bracht, H., Hüger, E., Schmidt, H., Hansen, J. Lundsgaard, Larsen, A. Nylandsted, Ager, J. W., Haller, E. E., Geue, T., Stahn, J., Uematsu, M., Itoh, K. M. (2014) Reply to “Comment on ‘Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions’ ”. Physical Review B, 90 (11) doi:10.1103/physrevb.90.117202
Krylov, S. Yu. (2000) Comment on “Nonequilibrium Diffusion in Zeolites due to Deterministic Hamiltonian Chaos”. Physical Review Letters, 85 (4). 900 doi:10.1103/physrevlett.85.900
 
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