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Südkamp, Tobias, Bracht, Hartmut (2016) Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to755∘C. Physical Review B, 94 (12) doi:10.1103/physrevb.94.125208

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Reference TypeJournal (article/letter/editorial)
TitleSelf-diffusion in crystalline silicon: A single diffusion activation enthalpy down to755∘C
JournalPhysical Review B
AuthorsSüdkamp, TobiasAuthor
Bracht, HartmutAuthor
Year2016 (September 29)Volume94
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.94.125208Search in ResearchGate
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Mindat Ref. ID14242560Long-form Identifiermindat:1:5:14242560:4
GUID0
Full ReferenceSüdkamp, Tobias, Bracht, Hartmut (2016) Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to755∘C. Physical Review B, 94 (12) doi:10.1103/physrevb.94.125208
Plain TextSüdkamp, Tobias, Bracht, Hartmut (2016) Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to755∘C. Physical Review B, 94 (12) doi:10.1103/physrevb.94.125208
In(2016, September) Physical Review B Vol. 94 (12) American Physical Society (APS)

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Südkamp, T., Hamdana, G., Descoins, M., Mangelinck, D., Wasisto, H. S., Peiner, E., Bracht, H. (2018) Self-diffusion in single crystalline silicon nanowires. Journal of Applied Physics, 123 (16). 161515pp. doi:10.1063/1.4996987
Kipke, Felix, Südkamp, Tobias, Prüßing, Jan K., Bougeard, Dominique, Bracht, Hartmut (2020) Diffusion of boron in germanium at 800–900 °C revisited. Journal of Applied Physics, 127 (2). 25703pp. doi:10.1063/1.5134537
Bracht, Hartmut, Haller, Eugene E. (2000) Comment on “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects”. Physical Review Letters, 85 (22). 4835 doi:10.1103/physrevlett.85.4835
Sunder, Kirsten, Bracht, Hartmut, Nicols, Samuel P., Haller, Eugene E. (2007) Zinc and gallium diffusion in gallium antimonide. Physical Review B, 75 (24) doi:10.1103/physrevb.75.245210
Bracht, H. (2007) Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations. Physical Review B, 75 (3) doi:10.1103/physrevb.75.035210
Bracht, H., Silvestri, H. H., Sharp, I. D., Haller, E. E. (2007) Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon. Physical Review B, 75 (3) doi:10.1103/physrevb.75.035211
Koizumi, Kenichi, Boero, Mauro, Shigeta, Yasuteru, Oshiyama, Atsushi (2011) Self-diffusion in crystalline silicon: A Car-Parrinello molecular dynamics study. Physical Review B, 84 (20) doi:10.1103/physrevb.84.205203
Bracht, H., Haller, E. E., Clark-Phelps, R. (1998) Silicon Self-Diffusion in Isotope Heterostructures. Physical Review Letters, 81 (2). 393-396 doi:10.1103/physrevlett.81.393
Jeffery, R. N., Gupta, D. (1972) Activation Volumes for Self-Diffusion in Ordered AuZn Alloys. Physical Review B, 6 (12) 4432-4438 doi:10.1103/physrevb.6.4432
Harrison, Scott A., Edgar, Thomas F., Hwang, Gyeong S. (2006) Prediction of the anomalous fluorine-silicon interstitial pair diffusion in crystalline silicon. Physical Review B, 74 (12) doi:10.1103/physrevb.74.121201
Posselt, M., Gao, F., Bracht, H. (2008) Correlation between self-diffusion in Si and the migration mechanisms of vacancies and self-interstitials: An atomistic study. Physical Review B, 78 (3) doi:10.1103/physrevb.78.035208
 
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