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Chen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays. Journal of Alloys and Compounds, 615. 566-568 doi:10.1016/j.jallcom.2014.06.200

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Reference TypeJournal (article/letter/editorial)
TitleComplementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays
JournalJournal of Alloys and Compounds
AuthorsChen, XinmanAuthor
Hu, WeiAuthor
Wu, ShuxiangAuthor
Bao, DinghuaAuthor
Year2014 (December)Volume615
PublisherElsevier BV
DOIdoi:10.1016/j.jallcom.2014.06.200Search in ResearchGate
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Mindat Ref. ID11906552Long-form Identifiermindat:1:5:11906552:9
GUID0
Full ReferenceChen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays. Journal of Alloys and Compounds, 615. 566-568 doi:10.1016/j.jallcom.2014.06.200
Plain TextChen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays. Journal of Alloys and Compounds, 615. 566-568 doi:10.1016/j.jallcom.2014.06.200
In(n.d.) Journal of Alloys and Compounds Vol. 615. Elsevier BV

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Chen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current. Applied Physics Letters, 104 (4). 43508pp. doi:10.1063/1.4863744
Chen, Xinman, Hu, Wei, Li, Yan, Wu, Shuxiang, Bao, Dinghua (2016) Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device. Applied Physics Letters, 108 (5). 53504pp. doi:10.1063/1.4941287
Hu, Wei, Chen, Xinman, Wu, Guangheng, Lin, Yanting, Qin, Ni, Bao, Dinghua (2012) Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices. Applied Physics Letters, 101 (6). 63501pp. doi:10.1063/1.4744950
Chen, Xinman, Wu, Guangheng, Jiang, Peng, Liu, Weifang, Bao, Dinghua (2009) Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications. Applied Physics Letters, 94 (3). 33501pp. doi:10.1063/1.3073858
Chen, Xinman, Wu, Guangheng, Bao, Dinghua (2008) Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications. Applied Physics Letters, 93 (9). 93501pp. doi:10.1063/1.2978158
Wu, Shuxiang, Chen, Xinman, Ren, Lizhu, Hu, Wei, Yu, Fengmei, Yang, Kungan, Yang, Mei, Wang, Yunjia, Meng, Meng, Zhou, Wenqi, Bao, Dinghua, Li, Shuwei (2014) Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices. Journal of Applied Physics, 116 (7). 74515pp. doi:10.1063/1.4893660
Chen, Xinman, Wu, Guangheng, Hu, Wei, Zhou, Hong, Bao, Dinghua (2012) Comparative investigation of unipolar resistance switching effect of Pt/Mg0.6Zn0.4O/Pt devices with different electrode patterns for nonvolatile memory application. Applied Physics A, 108. 503-508 doi:10.1007/s00339-012-6924-4
Zou, Lilan, Hu, Wei, Xie, Wei, Bao, Dinghua (2017) Uniform resistive switching properties of fully transparent TiO2-based memory devices. Journal of Alloys and Compounds, 693. 1180-1184 doi:10.1016/j.jallcom.2016.10.009
Hu, Wei, Zou, Lilan, Gao, Chao, Guo, Yongcai, Bao, Dinghua (2016) High speed and multi-level resistive switching capability of Ta2O5 thin films for nonvolatile memory application. Journal of Alloys and Compounds, 676. 356-360 doi:10.1016/j.jallcom.2016.03.211
Chen, Xinman, Zhang, Hu, Ruan, Kaibin, Shi, Wangzhou (2012) Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates. Journal of Alloys and Compounds, 529. 108-112 doi:10.1016/j.jallcom.2012.03.014
Hu, Wei, Zou, Lilan, Chen, Ruqi, Xie, Wei, Chen, Xinman, Qin, Ni, Li, Shuwei, Yang, Guowei, Bao, Dinghua (2014) Resistive switching properties and physical mechanism of cobalt ferrite thin films. Applied Physics Letters, 104 (14). 143502pp. doi:10.1063/1.4870627
 
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