Wu, Shuxiang, Chen, Xinman, Ren, Lizhu, Hu, Wei, Yu, Fengmei, Yang, Kungan, Yang, Mei, Wang, Yunjia, Meng, Meng, Zhou, Wenqi, Bao, Dinghua, Li, Shuwei (2014) Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices. Journal of Applied Physics, 116 (7). 74515pp. doi:10.1063/1.4893660
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices | ||
| Journal | Journal of Applied Physics | ||
| Authors | Wu, Shuxiang | Author | |
| Chen, Xinman | Author | ||
| Ren, Lizhu | Author | ||
| Hu, Wei | Author | ||
| Yu, Fengmei | Author | ||
| Yang, Kungan | Author | ||
| Yang, Mei | Author | ||
| Wang, Yunjia | Author | ||
| Meng, Meng | Author | ||
| Zhou, Wenqi | Author | ||
| Bao, Dinghua | Author | ||
| Li, Shuwei | Author | ||
| Year | 2014 (August 21) | Volume | 116 |
| Issue | 7 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4893660Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5200302 | Long-form Identifier | mindat:1:5:5200302:8 |
| GUID | 0 | ||
| Full Reference | Wu, Shuxiang, Chen, Xinman, Ren, Lizhu, Hu, Wei, Yu, Fengmei, Yang, Kungan, Yang, Mei, Wang, Yunjia, Meng, Meng, Zhou, Wenqi, Bao, Dinghua, Li, Shuwei (2014) Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices. Journal of Applied Physics, 116 (7). 74515pp. doi:10.1063/1.4893660 | ||
| Plain Text | Wu, Shuxiang, Chen, Xinman, Ren, Lizhu, Hu, Wei, Yu, Fengmei, Yang, Kungan, Yang, Mei, Wang, Yunjia, Meng, Meng, Zhou, Wenqi, Bao, Dinghua, Li, Shuwei (2014) Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices. Journal of Applied Physics, 116 (7). 74515pp. doi:10.1063/1.4893660 | ||
| In | (2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing | ||
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