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Tombs, N. C., Fitzgerald, J. F., Croft, W. J. (1963) Solid Solution in the Gallium Arsenide-Indium Arsenide System. Inorganic Chemistry, 2 (5) 1073-1074 doi:10.1021/ic50009a051

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Reference TypeJournal (article/letter/editorial)
TitleSolid Solution in the Gallium Arsenide-Indium Arsenide System
JournalInorganic Chemistry
AuthorsTombs, N. C.Author
Fitzgerald, J. F.Author
Croft, W. J.Author
Year1963 (October)Volume2
Issue5
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/ic50009a051Search in ResearchGate
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Mindat Ref. ID1350573Long-form Identifiermindat:1:5:1350573:0
GUID0
Full ReferenceTombs, N. C., Fitzgerald, J. F., Croft, W. J. (1963) Solid Solution in the Gallium Arsenide-Indium Arsenide System. Inorganic Chemistry, 2 (5) 1073-1074 doi:10.1021/ic50009a051
Plain TextTombs, N. C., Fitzgerald, J. F., Croft, W. J. (1963) Solid Solution in the Gallium Arsenide-Indium Arsenide System. Inorganic Chemistry, 2 (5) 1073-1074 doi:10.1021/ic50009a051
In(1963, October) Inorganic Chemistry Vol. 2 (5) American Chemical Society (ACS)

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Tombs, N. C., Croft, W. J., Carter, J. R., Fitzgerald, J. F. (1964) A New Polymorph of CrOOH. Inorganic Chemistry, 3 (12) 1791-1792 doi:10.1021/ic50022a035
Tombs, N. C., Croft, W. J., Mattraw, H. C. (1963) Preparation and Properties of Chromium Borate. Inorganic Chemistry, 2 (4) 872-873 doi:10.1021/ic50008a057
Fan, Fu-Ren F., Reichman, Benjamin, Bard, Allen J. (1980) Semiconductor electrodes. 27. The p- and n-gallium arsenide-N,N'-dimethyl-4,4'-bipyridinium system. Enhancement of hydrogen evolution on p-gallium arsenide and stabilization of n-gallium arsenide electrodes. Journal Of The American Chemical Society, 102 (5) 1488-1492 doi:10.1021/ja00525a003
Antonov, N. V., Koloskov, Yu. I., Kruzhilin, Yu. I. (1968) Some emission properties of gallium arsenide/indium arsenide solid solution diodes. Journal of Applied Spectroscopy, 8. 553-555 doi:10.1007/bf00618361
Vigdorovich, V. N., Kirichenko, L. S., Khlystovskaya, M. D. (1969) Microhardness and brittleness of solid solutions in the indium arsenide-gallium arsenide system. Soviet Powder Metallurgy and Metal Ceramics, 8. 719-721 doi:10.1007/bf00776010
FAN, F.-R. F., REICHMAN, B., BARD, A. J. (1980) ChemInform Abstract: SEMICONDUCTOR ELECTRODES. 27. THE P- AND N-GALLIUM ARSENIDE-N,N′-DIMETHYL-4,4′-BIPYRIDINIUM SYSTEM. ENHANCEMENT OF HYDROGEN EVOLUTION ON P-GALLIUM ARSENIDE AND STABILIZATION OF N-GALLIUM ARSENIDE ELECTRODES. Chemischer Informationsdienst, 11 (23) doi:10.1002/chin.198023020
Harrison, Ben C., Tompkins, Edwin H. (1962) Preparation of Indium Antimonide and Gallium Arsenide Films. Inorganic Chemistry, 1 (4) 951-953 doi:10.1021/ic50004a057
Allen, J W, Hodby, J W (1963) Infra-red Absorption in Gallium Phosphide-Gallium Arsenide Alloys I. Absorption in n-type Material. Proceedings of the Physical Society, 82 (2). 315-323 doi:10.1088/0370-1328/82/2/318
Sun, Y., Cheng, S. F., Chen, G., Hicks, R. F., Cederberg, J. G., Biefeld, R. M. (2005) The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001). Journal of Applied Physics, 97 (5). 53503pp. doi:10.1063/1.1858054
Morrison, Robert E. (1961) Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium Arsenide. Physical Review, 124 (5). 1314-1317 doi:10.1103/physrev.124.1314
HYDER, S. B. (1977) ChemInform Abstract: THIN FILM EPITAXIAL GROWTH OF INDIUM GALLIUM ARSENIDE (INXGA1-XAS) ON GALLIUM ARSENIDE. Chemischer Informationsdienst, 8 (5) doi:10.1002/chin.197705005
 
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