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Sun, Y., Cheng, S. F., Chen, G., Hicks, R. F., Cederberg, J. G., Biefeld, R. M. (2005) The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001). Journal of Applied Physics, 97 (5). 53503pp. doi:10.1063/1.1858054

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Reference TypeJournal (article/letter/editorial)
TitleThe effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
JournalJournal of Applied Physics
AuthorsSun, Y.Author
Cheng, S. F.Author
Chen, G.Author
Hicks, R. F.Author
Cederberg, J. G.Author
Biefeld, R. M.Author
Year2005 (March)Volume97
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1858054Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5133229Long-form Identifiermindat:1:5:5133229:7
GUID0
Full ReferenceSun, Y., Cheng, S. F., Chen, G., Hicks, R. F., Cederberg, J. G., Biefeld, R. M. (2005) The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001). Journal of Applied Physics, 97 (5). 53503pp. doi:10.1063/1.1858054
Plain TextSun, Y., Cheng, S. F., Chen, G., Hicks, R. F., Cederberg, J. G., Biefeld, R. M. (2005) The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001). Journal of Applied Physics, 97 (5). 53503pp. doi:10.1063/1.1858054
In(2005, March) Journal of Applied Physics Vol. 97 (5) AIP Publishing

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Sun, Y., Cheng, S. F., Chen, G., Woo, R. L., Hicks, R. F. (2005) The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor. Journal of Applied Physics, 97 (10). 103512pp. doi:10.1063/1.1897485
Storm, D. F., Lange, M. D., Cole, T. L. (1999) Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001). Journal of Applied Physics, 85 (9). 6838-6842 doi:10.1063/1.370292
Li, C. H., Sun, Y., Visbeck, S. B., Law, D. C., Hicks, R. F. (2002) Reflectance difference spectroscopy of an ultrathin indium arsenide layer on indium phosphide (001). Applied Physics Letters, 81 (21). 3939-3941 doi:10.1063/1.1523650
Li, L., Gan, S., Han, B.-K., Qi, H., Hicks, R. F. (1998) The reaction of carbon tetrachloride with gallium arsenide (001). Applied Physics Letters, 72 (8). 951-953 doi:10.1063/1.120620
Gonzalez-Debs, M., Cederberg, J. G., Biefeld, R. M., Kuech, T. F. (2005) Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb∕GaSb quantum well interfaces. Journal of Applied Physics, 97 (10). 103522pp. doi:10.1063/1.1900286
Law, D. C., Li, L., Begarney, M. J., Hicks, R. F. (2000) Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy. Journal of Applied Physics, 88 (1). 508-512 doi:10.1063/1.373687
Bray, T., Zhao, Y., Reece, P., Bremner, S. P. (2013) Photoluminescence of antimony sprayed indium arsenide quantum dots for novel photovoltaic devices. Journal of Applied Physics, 113 (9). 93102pp. doi:10.1063/1.4794018
Woo, R.L., Malouf, G., Cheng, S.F., Woo, R.N., Goorsky, M., Hicks, R.F. (2008) Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride. Journal of Crystal Growth, 310 (3). 579-583 doi:10.1016/j.jcrysgro.2007.11.087
Szmulowicz, F., Haugan, H. J., Brown, G. J. (2008) Analysis of (110) indium arsenide–gallium antimonide superlattices for infrared detection. Journal of Applied Physics, 104 (7). 74505pp. doi:10.1063/1.2990003
Singer, K. E., Rutter, P., Peaker, A. R., Wright, A. C. (1994) Self‐organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by molecular beam epitaxy. Applied Physics Letters, 64 (6). 707-709 doi:10.1063/1.111041
Harris, J. S., Nannichi, Y., Pearson, G. L., Day, G. F. (1969) Ohmic Contacts to Solution‐Grown Gallium Arsenide. Journal of Applied Physics, 40 (11). 4575-4581 doi:10.1063/1.1657234
 
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