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Harris, J. S., Nannichi, Y., Pearson, G. L., Day, G. F. (1969) Ohmic Contacts to Solution‐Grown Gallium Arsenide. Journal of Applied Physics, 40 (11). 4575-4581 doi:10.1063/1.1657234

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Reference TypeJournal (article/letter/editorial)
TitleOhmic Contacts to Solution‐Grown Gallium Arsenide
JournalJournal of Applied Physics
AuthorsHarris, J. S.Author
Nannichi, Y.Author
Pearson, G. L.Author
Day, G. F.Author
Year1969 (October)Volume40
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1657234Search in ResearchGate
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Mindat Ref. ID4955438Long-form Identifiermindat:1:5:4955438:2
GUID0
Full ReferenceHarris, J. S., Nannichi, Y., Pearson, G. L., Day, G. F. (1969) Ohmic Contacts to Solution‐Grown Gallium Arsenide. Journal of Applied Physics, 40 (11). 4575-4581 doi:10.1063/1.1657234
Plain TextHarris, J. S., Nannichi, Y., Pearson, G. L., Day, G. F. (1969) Ohmic Contacts to Solution‐Grown Gallium Arsenide. Journal of Applied Physics, 40 (11). 4575-4581 doi:10.1063/1.1657234
In(1969, October) Journal of Applied Physics Vol. 40 (11) AIP Publishing

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Spitzer, W. G., Panish, M. B. (1969) Silicon‐Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site Distribution. Journal of Applied Physics, 40 (10). 4200-4202 doi:10.1063/1.1657165
Dumin, D. J., Pearson, G. L. (1965) Properties of Gallium Arsenide Diodes between 4.2° and 300°K. Journal of Applied Physics, 36 (11). 3418-3426 doi:10.1063/1.1703009
Brehm, G. E., Pearson, G. L. (1972) Gamma‐Radiation Damage in Epitaxial Gallium Arsenide. Journal of Applied Physics, 43 (2). 568-574 doi:10.1063/1.1661157
Casey, H. C., Pearson, G. L. (1964) Rare Earths in Covalent Semiconductors: the Thulium‐Gallium Arsenide System. Journal of Applied Physics, 35 (11). 3401-3407 doi:10.1063/1.1713229
Guo, S. F., Thurmond, C. D., Pearson, G. L. (1971) Concentration of Zinc in Gallium Arsenide Crystals Grown by Slowly Cooling Gallium-Rich Solutions. Journal of the Electrochemical Society, 118. 486pp. doi:10.1149/1.2408088
Nie, H.‐Y., Nannichi, Y. (1994) Schottky and ohmic contacts of Pd onp‐type GaAs distinguished with hydrogen. Journal of Applied Physics, 76 (7). 4205-4208 doi:10.1063/1.357375
Hugon, M. C., Agius, B., Varniere, F., Dubon‐Chevallier, C., Bresse, J. F., Froment, M. (1991) Thermally stable low resistance ohmic contacts ton‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contacts. Applied Physics Letters, 58 (24). 2773-2775 doi:10.1063/1.104782
Ruch, J. G., Kino, G. S. (1967) MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GALLIUM ARSENIDE. Applied Physics Letters, 10 (2). 40-42 doi:10.1063/1.1754837
Sun, Y., Cheng, S. F., Chen, G., Hicks, R. F., Cederberg, J. G., Biefeld, R. M. (2005) The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001). Journal of Applied Physics, 97 (5). 53503pp. doi:10.1063/1.1858054
Potts, H. R., Pearson, G. L. (1966) Annealing and Arsenic Overpressure Experiments on Defects in Gallium Arsenide. Journal of Applied Physics, 37 (5). 2098-2103 doi:10.1063/1.1708715
MORGAN, D. V., FREY, J., DEVLIN, W. J. (1980) ChemInform Abstract: RECTIFYING AND OHMIC CONTACTS TO GALLIUM INDIUM ARSENIDE PHOSPHIDE. Chemischer Informationsdienst, 11 (34) doi:10.1002/chin.198034014
 
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