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Fujimori, A., Grioni, M., Weaver, J. H. (1986) Rare-earth-metal–semiconductor interfacial reactions: Thermodynamic aspects. Physical Review B, 33 (2) 726-735 doi:10.1103/physrevb.33.726

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Reference TypeJournal (article/letter/editorial)
TitleRare-earth-metal–semiconductor interfacial reactions: Thermodynamic aspects
JournalPhysical Review B
AuthorsFujimori, A.Author
Grioni, M.Author
Weaver, J. H.Author
Year1986 (January 15)Volume33
Issue2
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.33.726Search in ResearchGate
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Mindat Ref. ID14092322Long-form Identifiermindat:1:5:14092322:5
GUID0
Full ReferenceFujimori, A., Grioni, M., Weaver, J. H. (1986) Rare-earth-metal–semiconductor interfacial reactions: Thermodynamic aspects. Physical Review B, 33 (2) 726-735 doi:10.1103/physrevb.33.726
Plain TextFujimori, A., Grioni, M., Weaver, J. H. (1986) Rare-earth-metal–semiconductor interfacial reactions: Thermodynamic aspects. Physical Review B, 33 (2) 726-735 doi:10.1103/physrevb.33.726
In(1986, January) Physical Review B Vol. 33 (2) American Physical Society (APS)

See Also

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Weaver, J. H., Grioni, M., Joyce, J. J., del Giudice, M. (1985) Reactions at a rare-earth–GaAs interface: Ce/GaAs(110) Physical Review B, 31 (8) 5290-5296 doi:10.1103/physrevb.31.5290
Fujimori, A., Grioni, M., Joyce, J. J., Weaver, J. H. (1987) Chemical bonding in ordered Ce overlayers on Si(111) Physical Review B, 36 (2) 1075-1079 doi:10.1103/physrevb.36.1075
Grioni, M., Joyce, J., del Giudice, M., O'Neill, D. G., Weaver, J. H. (1984) Modeling a heterogeneous metal/semiconductor interface: Ce on Si(111) Physical Review B, 30 (12) 7370-7373 doi:10.1103/physrevb.30.7370
Butera, R. A., del Giudice, M., Weaver, J. H. (1986) Quantitative model of reactive metal-semiconductor interface growth using high-resolution photoemission results. Physical Review B, 33 (8) 5435-5449 doi:10.1103/physrevb.33.5435
Fujimori, Atsushi, Grioni, M., Joyce, J. J., Weaver, J. H. (1985) 4fphotoemission from Ce clusters and disordered reaction products at Ce/Si and Ce/GaAs interfaces. Physical Review B, 31 (12) 8291-8294 doi:10.1103/physrevb.31.8291
Grioni, M., Joyce, J., Chambers, S. A., O'Neill, D. G., del Giudice, M., Weaver, J. H. (1984) Cluster-Induced Reactions at a Metal-Semiconductor Interface: Ce on Si(111). Physical Review Letters, 53 (24). 2331-2334 doi:10.1103/physrevlett.53.2331
Grioni, M., Joyce, J. J., Weaver, J. H. (1985) Adatom aggregation, reaction, and chemical trapping at the Sm/GaAs(110) interface. Physical Review B, 32 (2) 962-968 doi:10.1103/physrevb.32.962
Ruckman, M. W., del Giudice, M., Weaver, J. H. (1985) Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110) Physical Review B, 32 (2) 1077-1084 doi:10.1103/physrevb.32.1077
Weaver, J. H., Grioni, M., Joyce, J. (1985) Critical development stages for the reactive Cr-GaAs(110) interface. Physical Review B, 31 (8) 5348-5354 doi:10.1103/physrevb.31.5348
Chambers, S. A., Xu, F., Chen, H. W., Vitomirov, I. M., Anderson, S. B., Weaver, J. H. (1986) Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8Ă—2) Physical Review B, 34 (10) 6605-6611 doi:10.1103/physrevb.34.6605
Weaver, J. H., Peterson, D. T., Butera, R. A., Fujimori, A. (1985) Electronic interactions in metal-hydrogen solid solutions:ScHx,YHx, andV0.75Nb0.25Hx. Physical Review B, 32 (6) 3562-3567 doi:10.1103/physrevb.32.3562
 
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