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Boscherini, F., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) High-resolution photoemission study of Co/Si(111) interface formation. Physical Review B, 35 (9) 4216-4220 doi:10.1103/physrevb.35.4216

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Reference TypeJournal (article/letter/editorial)
TitleHigh-resolution photoemission study of Co/Si(111) interface formation
JournalPhysical Review B
AuthorsBoscherini, F.Author
Joyce, J. J.Author
Ruckman, M. W.Author
Weaver, J. H.Author
Year1987 (March 15)Volume35
Issue9
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.35.4216Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14095939Long-form Identifiermindat:1:5:14095939:2
GUID0
Full ReferenceBoscherini, F., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) High-resolution photoemission study of Co/Si(111) interface formation. Physical Review B, 35 (9) 4216-4220 doi:10.1103/physrevb.35.4216
Plain TextBoscherini, F., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) High-resolution photoemission study of Co/Si(111) interface formation. Physical Review B, 35 (9) 4216-4220 doi:10.1103/physrevb.35.4216
In(1987, March) Physical Review B Vol. 35 (9) American Physical Society (APS)

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del Giudice, M., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation. Physical Review B, 35 (12) 6213-6221 doi:10.1103/physrevb.35.6213
Joyce, J. J., Boscherini, F., Ruckman, M. W., Weaver, J. H. (1987) Chemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers. Physical Review B, 36 (3) 1605-1611 doi:10.1103/physrevb.36.1605
Xu, F., Joyce, J. J., Ruckman, M. W., Chen, H. -W., Boscherini, F., Hill, D. M., Chambers, S. A., Weaver, J. H. (1987) Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82) Physical Review B, 35 (5) 2375-2384 doi:10.1103/physrevb.35.2375
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Photoemission study of the development of the Ti/GaAs(110) interface. Physical Review B, 33 (4) 2191-2197 doi:10.1103/physrevb.33.2191
del Giudice, M., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1985) Cluster formation and atomic intermixing at the reactive V/Ge(111) interface. Physical Review B, 32 (8) 5149-5155 doi:10.1103/physrevb.32.5149
Ruckman, M. W., Joyce, J. J., Boscherini, F., Weaver, J. H. (1986) Asymmetries in atomic intermixing at Au/Ge and Ge/Au interfaces. Physical Review B, 34 (8) 5118-5124 doi:10.1103/physrevb.34.5118
Ruckman, M. W., Joyce, J. J., Weaver, J. H. (1986) Interdiffusion and reaction at the Fe/GaAs(110) interface. Physical Review B, 33 (10) 7029-7035 doi:10.1103/physrevb.33.7029
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Soft-x-ray photoemission study of Cr-Ge intermixing on crystalline and amorphous Ge surfaces. Physical Review B, 34 (6) 4010-4016 doi:10.1103/physrevb.34.4010
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Comparative study of the formation of Cr/Ge and Ge/Cr thin-film interfaces. Physical Review B, 33 (12) 8039-8047 doi:10.1103/physrevb.33.8039
Chambers, S. A., Hill, D. M., Xu, F., Weaver, J. H. (1987) Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures. Physical Review B, 35 (2) 634-640 doi:10.1103/physrevb.35.634
Fujimori, A., Grioni, M., Joyce, J. J., Weaver, J. H. (1987) Chemical bonding in ordered Ce overlayers on Si(111) Physical Review B, 36 (2) 1075-1079 doi:10.1103/physrevb.36.1075
 
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