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Joyce, J. J., Boscherini, F., Ruckman, M. W., Weaver, J. H. (1987) Chemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers. Physical Review B, 36 (3) 1605-1611 doi:10.1103/physrevb.36.1605

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Reference TypeJournal (article/letter/editorial)
TitleChemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers
JournalPhysical Review B
AuthorsJoyce, J. J.Author
Boscherini, F.Author
Ruckman, M. W.Author
Weaver, J. H.Author
Year1987 (July 15)Volume36
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.36.1605Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14096979Long-form Identifiermindat:1:5:14096979:7
GUID0
Full ReferenceJoyce, J. J., Boscherini, F., Ruckman, M. W., Weaver, J. H. (1987) Chemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers. Physical Review B, 36 (3) 1605-1611 doi:10.1103/physrevb.36.1605
Plain TextJoyce, J. J., Boscherini, F., Ruckman, M. W., Weaver, J. H. (1987) Chemical trapping and modification of the Au/GaAs(110) interface using Sm interlayers. Physical Review B, 36 (3) 1605-1611 doi:10.1103/physrevb.36.1605
In(1987, July) Physical Review B Vol. 36 (3) American Physical Society (APS)

See Also

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Boscherini, F., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) High-resolution photoemission study of Co/Si(111) interface formation. Physical Review B, 35 (9) 4216-4220 doi:10.1103/physrevb.35.4216
Grioni, M., Joyce, J. J., Weaver, J. H. (1985) Adatom aggregation, reaction, and chemical trapping at the Sm/GaAs(110) interface. Physical Review B, 32 (2) 962-968 doi:10.1103/physrevb.32.962
Xu, F., Joyce, J. J., Ruckman, M. W., Chen, H. -W., Boscherini, F., Hill, D. M., Chambers, S. A., Weaver, J. H. (1987) Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82) Physical Review B, 35 (5) 2375-2384 doi:10.1103/physrevb.35.2375
Ruckman, M. W., Joyce, J. J., Weaver, J. H. (1986) Interdiffusion and reaction at the Fe/GaAs(110) interface. Physical Review B, 33 (10) 7029-7035 doi:10.1103/physrevb.33.7029
Ruckman, M. W., Joyce, J. J., Boscherini, F., Weaver, J. H. (1986) Asymmetries in atomic intermixing at Au/Ge and Ge/Au interfaces. Physical Review B, 34 (8) 5118-5124 doi:10.1103/physrevb.34.5118
Ruckman, M. W., del Giudice, M., Joyce, J. J., Weaver, J. H. (1986) Photoemission study of the development of the Ti/GaAs(110) interface. Physical Review B, 33 (4) 2191-2197 doi:10.1103/physrevb.33.2191
Boscherini, F., Shapira, Y., Capasso, C., Weaver, J. H. (1988) Synchrotron-radiation photoemission studies of Cu/InSb(110) interface evolution and modification by Al interlayers. Physical Review B, 37 (14) 8022-8026 doi:10.1103/physrevb.37.8022
del Giudice, M., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1987) Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formation. Physical Review B, 35 (12) 6213-6221 doi:10.1103/physrevb.35.6213
Shapira, Yoram, Boscherini, F., Capasso, C., Xu, F., Hill, D. M., Weaver, and J. H. (1987) Au/InSb(110) interface profiles from synchrotron-radiation and polar-angle-dependent x-ray photoemission. Physical Review B, 36 (14) 7656-7659 doi:10.1103/physrevb.36.7656
del Giudice, M., Joyce, J. J., Ruckman, M. W., Weaver, J. H. (1985) Cluster formation and atomic intermixing at the reactive V/Ge(111) interface. Physical Review B, 32 (8) 5149-5155 doi:10.1103/physrevb.32.5149
Weaver, J. H., Grioni, M., Joyce, J. J., del Giudice, M. (1985) Reactions at a rare-earth–GaAs interface: Ce/GaAs(110) Physical Review B, 31 (8) 5290-5296 doi:10.1103/physrevb.31.5290
 
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