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Lucas, C. A., Loretto, D., Wong, G. C. L. (1994) Epitaxial growth mechanisms and structure ofCaF2/Si(111) Physical Review B, 50 (19) 14340-14353 doi:10.1103/physrevb.50.14340

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth mechanisms and structure ofCaF2/Si(111)
JournalPhysical Review B
AuthorsLucas, C. A.Author
Loretto, D.Author
Wong, G. C. L.Author
Year1994 (November 15)Volume50
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.50.14340Search in ResearchGate
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Mindat Ref. ID14125532Long-form Identifiermindat:1:5:14125532:5
GUID0
Full ReferenceLucas, C. A., Loretto, D., Wong, G. C. L. (1994) Epitaxial growth mechanisms and structure ofCaF2/Si(111) Physical Review B, 50 (19) 14340-14353 doi:10.1103/physrevb.50.14340
Plain TextLucas, C. A., Loretto, D., Wong, G. C. L. (1994) Epitaxial growth mechanisms and structure ofCaF2/Si(111) Physical Review B, 50 (19) 14340-14353 doi:10.1103/physrevb.50.14340
In(1994, November) Physical Review B Vol. 50 (19) American Physical Society (APS)

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Lucas, C. A., Wong, G. C. L., Loretto, D. (1993) Structural transitions of theCaF2/Si(111) interface. Physical Review Letters, 70 (12). 1826-1829 doi:10.1103/physrevlett.70.1826
Wong, G. C. L., Loretto, D., Rotenberg, Eli, Olmstead, Marjorie A., Lucas, C. A. (1993) CaF2-Si(111) as a model ionic-covalent system: Transition from chemisorption to epitaxy. Physical Review B, 48 (8) 5716-5719 doi:10.1103/physrevb.48.5716
Wong, G. C. L., Lucas, C. A., Loretto, D., Payne, A. P., Fuoss, P. H. (1994) Parallel Adatom Chains on Si(111): A Chemisorption-Induced Surface Reconstruction. Physical Review Letters, 73 (7). 991-994 doi:10.1103/physrevlett.73.991
Tuilier, M. H., Wetzel, P., Pirri, C., Bolmont, D., Gewinner, G. (1994) Interfacial structure of two-dimensional epitaxial Er silicide on Si(111) Physical Review B, 50 (4) 2333-2338 doi:10.1103/physrevb.50.2333
Ratsch, C., Nelson, M. D., Zangwill, A. (1994) Theory of strained-layer epitaxial growth near step flow. Physical Review B, 50 (19) 14489-14497 doi:10.1103/physrevb.50.14489
Wetzel, P., Saintenoy, S., Pirri, C., Bolmont, D., Gewinner, G. (1994) Surface states and reconstruction of epitaxial √3 × √3 R30° Er silicide on Si(111) Physical Review B, 50 (15) 10886-10892 doi:10.1103/physrevb.50.10886
Lucas, C. A., Loretto, D. (1992) New insight into the structure and growth of CaF2/Si(111). Applied Physics Letters, 60 (17). 2071-2073 doi:10.1063/1.107092
Loretto, D., Ross, F. M., Lucas, C. A., Wong, G. C. L. (1994) Direct observation of interface and surface steps in epitaxial films by dark‐field transmission electron microscopy. Applied Physics Letters, 65 (14). 1766-1768 doi:10.1063/1.112912
Biswas, R., Roos, K., Tringides, M. C. (1994) Low-temperature growth on Si(111) substrates. Physical Review B, 50 (15) 10932-10940 doi:10.1103/physrevb.50.10932
Stauffer, L., Mharchi, A., Pirri, C., Wetzel, P., Bolmont, D., Gewinner, G., Minot, C. (1993) Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111) Physical Review B, 47 (16) 10555-10562 doi:10.1103/physrevb.47.10555
Klust, Andreas, Kayser, Robert, Wollschläger, Joachim (2000) Growth kinetics ofCaF2/Si(111)for a two-step deposition. Physical Review B, 62 (3) 2158-2163 doi:10.1103/physrevb.62.2158
 
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