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Loretto, D., Ross, F. M., Lucas, C. A., Wong, G. C. L. (1994) Direct observation of interface and surface steps in epitaxial films by dark‐field transmission electron microscopy. Applied Physics Letters, 65 (14). 1766-1768 doi:10.1063/1.112912

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Reference TypeJournal (article/letter/editorial)
TitleDirect observation of interface and surface steps in epitaxial films by dark‐field transmission electron microscopy
JournalApplied Physics Letters
AuthorsLoretto, D.Author
Ross, F. M.Author
Lucas, C. A.Author
Wong, G. C. L.Author
Year1994 (October 3)Volume65
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.112912Search in ResearchGate
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Mindat Ref. ID8509781Long-form Identifiermindat:1:5:8509781:2
GUID0
Full ReferenceLoretto, D., Ross, F. M., Lucas, C. A., Wong, G. C. L. (1994) Direct observation of interface and surface steps in epitaxial films by dark‐field transmission electron microscopy. Applied Physics Letters, 65 (14). 1766-1768 doi:10.1063/1.112912
Plain TextLoretto, D., Ross, F. M., Lucas, C. A., Wong, G. C. L. (1994) Direct observation of interface and surface steps in epitaxial films by dark‐field transmission electron microscopy. Applied Physics Letters, 65 (14). 1766-1768 doi:10.1063/1.112912
In(1994, October) Applied Physics Letters Vol. 65 (14) AIP Publishing

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Lucas, C. A., Loretto, D., Wong, G. C. L. (1994) Epitaxial growth mechanisms and structure ofCaF2/Si(111) Physical Review B, 50 (19) 14340-14353 doi:10.1103/physrevb.50.14340
Liu, D. G., Fan, J. C., Lee, C. P., Tsai, C. M., Chang, K. H., Liou, D. C., Lee, T. L., Chen, L. J. (1992) Direct observation of Si delta‐doped GaAs by transmission electron microscopy. Applied Physics Letters, 60 (21). 2628-2630 doi:10.1063/1.106902
Loretto, D., Ross, F. M., Lucas, C. A. (1996) Quasi‐one‐dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy. Applied Physics Letters, 68 (17). 2363-2365 doi:10.1063/1.115859
Lucas, C. A., Wong, G. C. L., Loretto, D. (1993) Structural transitions of theCaF2/Si(111) interface. Physical Review Letters, 70 (12). 1826-1829 doi:10.1103/physrevlett.70.1826
Chen, Kuan-Chia, Liao, Chien-Neng, Wu, Wen-Wei, Chen, Lih-Juann (2007) Direct observation of electromigration-induced surface atomic steps in Cu lines by in situ transmission electron microscopy. Applied Physics Letters, 90 (20). 203101pp. doi:10.1063/1.2740109
Abrahams, M. S., Hutchison, J. L., Booker, G. R. (1981) Direct observation of a silicon-sapphire hetero-epitaxial interface by high resolution transmission electron microscopy. physica status solidi (a), 63 (1). doi:10.1002/pssa.2210630150
Araújo, D., Alegre, M. P., Piñero, J. C., Fiori, A., Bustarret, E., Jomard, F. (2013) Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers. Applied Physics Letters, 103 (4). 42104pp. doi:10.1063/1.4816418
Fung, K. K., Wang, N., Sou, I. K. (1997) Direct observation of stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers by weak beam dark-field transmission electron microscopy. Applied Physics Letters, 71 (9). 1225-1227 doi:10.1063/1.119858
Wong, G. C. L., Lucas, C. A., Loretto, D., Payne, A. P., Fuoss, P. H. (1994) Parallel Adatom Chains on Si(111): A Chemisorption-Induced Surface Reconstruction. Physical Review Letters, 73 (7). 991-994 doi:10.1103/physrevlett.73.991
Lann, A. F., Abu-Teir, M., Golosovsky, M., Davidov, D., Goldgirsch, A., Beilin, V. (1999) Magnetic-field-modulated microwave reflectivity of high- Tc superconductors studied by near-field mm-wave microscopy. Applied Physics Letters, 75 (12). 1766-1768 doi:10.1063/1.124813
Takeno, S., Koike, M., Tanaka, H., Kinno, T., Tomita, M., Uesugi, F. (2008) Forbidden reflection based dark field transmission electron microscopy for the evaluation of local lattice distortion in epitaxial thin films. Surface and Interface Analysis, 40 (13). 1655-1659 doi:10.1002/sia.2961
 
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