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Liu, D. G., Fan, J. C., Lee, C. P., Tsai, C. M., Chang, K. H., Liou, D. C., Lee, T. L., Chen, L. J. (1992) Direct observation of Si delta‐doped GaAs by transmission electron microscopy. Applied Physics Letters, 60 (21). 2628-2630 doi:10.1063/1.106902

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Reference TypeJournal (article/letter/editorial)
TitleDirect observation of Si delta‐doped GaAs by transmission electron microscopy
JournalApplied Physics Letters
AuthorsLiu, D. G.Author
Fan, J. C.Author
Lee, C. P.Author
Tsai, C. M.Author
Chang, K. H.Author
Liou, D. C.Author
Lee, T. L.Author
Chen, L. J.Author
Year1992 (May 25)Volume60
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.106902Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8498840Long-form Identifiermindat:1:5:8498840:1
GUID0
Full ReferenceLiu, D. G., Fan, J. C., Lee, C. P., Tsai, C. M., Chang, K. H., Liou, D. C., Lee, T. L., Chen, L. J. (1992) Direct observation of Si delta‐doped GaAs by transmission electron microscopy. Applied Physics Letters, 60 (21). 2628-2630 doi:10.1063/1.106902
Plain TextLiu, D. G., Fan, J. C., Lee, C. P., Tsai, C. M., Chang, K. H., Liou, D. C., Lee, T. L., Chen, L. J. (1992) Direct observation of Si delta‐doped GaAs by transmission electron microscopy. Applied Physics Letters, 60 (21). 2628-2630 doi:10.1063/1.106902
In(1992, May) Applied Physics Letters Vol. 60 (21) AIP Publishing

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Liu, D. G., Fan, J. C., Lee, C. P., Chang, K. H., Liou, D. C. (1993) Transmission electron microscopy study of heavily delta‐doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 73 (2). 608-614 doi:10.1063/1.353370
Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Delta‐doped quantum well structures grown by molecular beam epitaxy. Applied Physics Letters, 57 (18). 1887-1888 doi:10.1063/1.104001
Tsang, J. S., Lee, C. P., Lee, S. H., Tsai, K. L., Tsai, C. M., Fan, J. C. (1996) Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers. Journal of Applied Physics, 79 (2). 664pp. doi:10.1063/1.360810
Liu, D. G., Chang, K. H., Lee, C. P., Hsu, T. M., Tien, Y. C. (1992) Photoreflection study on the surface electric field of delta‐doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 72 (4). 1468-1472 doi:10.1063/1.351710
Tsang, J. S., Liou, D. C., Tsai, K. L., Chen, H. R., Tsai, C. M., Lee, C. P., Juang, F. Y. (1993) Fundamental mode operation of high‐power InGaAs/GaAs/AlGaAs laser arrays. Journal of Applied Physics, 73 (9). 4706-4708 doi:10.1063/1.352741
Chang, K. H., Lee, C. P., Wu, J. S., Liu, D. G., Liou, D. C., Wang, M. H., Chen, L. J., Marais, Mario A. (1991) Precise determination of aluminum content in AlGaAs. Journal of Applied Physics, 70 (9). 4877-4882 doi:10.1063/1.349030
Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Behavior of the first layer growth in GaAs molecular beam epitaxy. Applied Physics Letters, 57 (14). 1392-1394 doi:10.1063/1.103445
Sheu, J. K., Lee, M. L., Yeh, L. S., Kao, C. J., Tun, C. J., Chen, M. G., Chi, G. C., Chang, S. J., Su, Y. K., Lee, C. T. (2002) Planar GaN n+–p photodetectors formed by Si implantation into p-GaN. Applied Physics Letters, 81 (22). 4263-4265 doi:10.1063/1.1524689
Tsai, K. L., Chang, K. H., Lee, C. P., Huang, K. F., Chang, Y., Fan, J. C., Liu, D. G. (1992) Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells. Journal of Applied Physics, 72 (6). 2449-2452 doi:10.1063/1.351590
Tsai, K. L., Lee, C. P., Chang, K. H., Liu, D. C., Chen, H. R., Tsang, J. S. (1994) Asymmetric dark current in quantum well infrared photodetectors. Applied Physics Letters, 64 (18). 2436-2438 doi:10.1063/1.111591
Wu, J. S., Lee, C. P., Chang, C. Y., Chang, K. H., Liu, D. G., Liou, D. C. (1991) Improved AlGaAs/GaAs double‐barrier resonant tunneling structures using two‐dimensional source electrons. Journal of Applied Physics, 69 (2). 1122-1123 doi:10.1063/1.347385
 
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