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Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Behavior of the first layer growth in GaAs molecular beam epitaxy. Applied Physics Letters, 57 (14). 1392-1394 doi:10.1063/1.103445

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Reference TypeJournal (article/letter/editorial)
TitleBehavior of the first layer growth in GaAs molecular beam epitaxy
JournalApplied Physics Letters
AuthorsLiu, D. G.Author
Lee, C. P.Author
Chang, K. H.Author
Wu, J. S.Author
Liou, D. C.Author
Year1990 (October)Volume57
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.103445Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8491708Long-form Identifiermindat:1:5:8491708:7
GUID0
Full ReferenceLiu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Behavior of the first layer growth in GaAs molecular beam epitaxy. Applied Physics Letters, 57 (14). 1392-1394 doi:10.1063/1.103445
Plain TextLiu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Behavior of the first layer growth in GaAs molecular beam epitaxy. Applied Physics Letters, 57 (14). 1392-1394 doi:10.1063/1.103445
In(1990, October) Applied Physics Letters Vol. 57 (14) AIP Publishing

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Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Delta‐doped quantum well structures grown by molecular beam epitaxy. Applied Physics Letters, 57 (18). 1887-1888 doi:10.1063/1.104001
Chang, K. H., Lee, C. P., Wu, J. S., Liu, D. G., Liou, D. C. (1990) Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. Applied Physics Letters, 57 (16). 1640-1642 doi:10.1063/1.104073
Wu, J. S., Chang, C. Y., Lee, C. P., Chang, K. H., Liu, D. G., Liou, D. C. (1990) Resonant tunneling of electrons from quantized levels in the accumulation layer of double‐barrier heterostructures. Applied Physics Letters, 57 (22). 2311-2312 doi:10.1063/1.103879
Liu, D. G., Fan, J. C., Lee, C. P., Chang, K. H., Liou, D. C. (1993) Transmission electron microscopy study of heavily delta‐doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 73 (2). 608-614 doi:10.1063/1.353370
Wu, J. S., Chang, K. H., Lee, C. P., Chang, C. Y., Liu, D. G., Liou, D. C. (1991) Quantum effect in the accumulation layer on field‐induced photoluminescence of double‐barrier resonant tunneling structures. Applied Physics Letters, 59 (1). 87-89 doi:10.1063/1.105532
Wu, J. S., Lee, C. P., Chang, C. Y., Chang, K. H., Liu, D. G., Liou, D. C. (1991) Improved AlGaAs/GaAs double‐barrier resonant tunneling structures using two‐dimensional source electrons. Journal of Applied Physics, 69 (2). 1122-1123 doi:10.1063/1.347385
Wu, J. S., Lee, C. P., Chang, C. Y, Chang, K. H., Liu, D. G., Liou, D. C. (1990) Repetition of negative differential resistance in vertically integrated double‐barrier resonant tunneling structures. Journal of Applied Physics, 67 (9). 4382-4385 doi:10.1063/1.344910
Liou, D. C., Chiang, W. H., Lee, C. P., Chang, K. H., Liu, D. G., Wu, J. S., Tu, Y. K. (1992) A novel technique for low‐threshold and high‐power InGaAs/GaAs strained‐layer 0.98‐μm buried heterostructure laser fabrication. Journal of Applied Physics, 71 (3). 1525-1527 doi:10.1063/1.351398
Liu, D. G., Fan, J. C., Lee, C. P., Tsai, C. M., Chang, K. H., Liou, D. C., Lee, T. L., Chen, L. J. (1992) Direct observation of Si delta‐doped GaAs by transmission electron microscopy. Applied Physics Letters, 60 (21). 2628-2630 doi:10.1063/1.106902
Liu, D. G., Chang, K. H., Lee, C. P., Hsu, T. M., Tien, Y. C. (1992) Photoreflection study on the surface electric field of delta‐doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 72 (4). 1468-1472 doi:10.1063/1.351710
Chang, K. H., Lee, C. P., Wu, J. S., Liu, D. G., Liou, D. C., Wang, M. H., Chen, L. J., Marais, Mario A. (1991) Precise determination of aluminum content in AlGaAs. Journal of Applied Physics, 70 (9). 4877-4882 doi:10.1063/1.349030
 
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