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Wu, J. S., Lee, C. P., Chang, C. Y, Chang, K. H., Liu, D. G., Liou, D. C. (1990) Repetition of negative differential resistance in vertically integrated double‐barrier resonant tunneling structures. Journal of Applied Physics, 67 (9). 4382-4385 doi:10.1063/1.344910

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Reference TypeJournal (article/letter/editorial)
TitleRepetition of negative differential resistance in vertically integrated double‐barrier resonant tunneling structures
JournalJournal of Applied Physics
AuthorsWu, J. S.Author
Lee, C. P.Author
Chang, C. YAuthor
Chang, K. H.Author
Liu, D. G.Author
Liou, D. C.Author
Year1990 (May)Volume67
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.344910Search in ResearchGate
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Mindat Ref. ID5046196Long-form Identifiermindat:1:5:5046196:3
GUID0
Full ReferenceWu, J. S., Lee, C. P., Chang, C. Y, Chang, K. H., Liu, D. G., Liou, D. C. (1990) Repetition of negative differential resistance in vertically integrated double‐barrier resonant tunneling structures. Journal of Applied Physics, 67 (9). 4382-4385 doi:10.1063/1.344910
Plain TextWu, J. S., Lee, C. P., Chang, C. Y, Chang, K. H., Liu, D. G., Liou, D. C. (1990) Repetition of negative differential resistance in vertically integrated double‐barrier resonant tunneling structures. Journal of Applied Physics, 67 (9). 4382-4385 doi:10.1063/1.344910
In(1990, May) Journal of Applied Physics Vol. 67 (9) AIP Publishing

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Wu, J. S., Lee, C. P., Chang, C. Y., Chang, K. H., Liu, D. G., Liou, D. C. (1991) Improved AlGaAs/GaAs double‐barrier resonant tunneling structures using two‐dimensional source electrons. Journal of Applied Physics, 69 (2). 1122-1123 doi:10.1063/1.347385
Wu, J. S., Chang, C. Y., Lee, C. P., Chang, K. H., Liu, D. G., Liou, D. C. (1990) Resonant tunneling of electrons from quantized levels in the accumulation layer of double‐barrier heterostructures. Applied Physics Letters, 57 (22). 2311-2312 doi:10.1063/1.103879
Wu, J. S., Chang, K. H., Lee, C. P., Chang, C. Y., Liu, D. G., Liou, D. C. (1991) Quantum effect in the accumulation layer on field‐induced photoluminescence of double‐barrier resonant tunneling structures. Applied Physics Letters, 59 (1). 87-89 doi:10.1063/1.105532
Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Delta‐doped quantum well structures grown by molecular beam epitaxy. Applied Physics Letters, 57 (18). 1887-1888 doi:10.1063/1.104001
Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Behavior of the first layer growth in GaAs molecular beam epitaxy. Applied Physics Letters, 57 (14). 1392-1394 doi:10.1063/1.103445
Chang, K. H., Lee, C. P., Wu, J. S., Liu, D. G., Liou, D. C. (1990) Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. Applied Physics Letters, 57 (16). 1640-1642 doi:10.1063/1.104073
Chang, K. H., Lee, C. P., Wu, J. S., Liu, D. G., Liou, D. C., Wang, M. H., Chen, L. J., Marais, Mario A. (1991) Precise determination of aluminum content in AlGaAs. Journal of Applied Physics, 70 (9). 4877-4882 doi:10.1063/1.349030
Houng, M. P., Wang, Y. H., Shen, C. L. (1991) The negative differential resistance characteristics of double‐barrier interband tunneling structures. Journal of Applied Physics, 70 (8). 4640-4642 doi:10.1063/1.349053
Pritchard, R., Austing, D. G., Klipstein, P. C., Roberts, J. S., Higgs, A. W., Smith, G. W. (1990) The suppression by pressure of negative differential resistance in GaAs/GaAlAs double barrier structures. Journal of Applied Physics, 68 (1). 205-211 doi:10.1063/1.347117
Kan, S. C., Yariv, A. (1990) Incoherent resonant tunneling without reflection in asymmetric double‐barrier structures. Journal of Applied Physics, 67 (8). 3892-3894 doi:10.1063/1.344994
Chow, D. H., Yu, E. T., Söderström, J. R., Ting, D. Z.‐Y., McGill, T. C. (1990) Negative differential resistance due to resonant interband tunneling of holes. Journal of Applied Physics, 68 (7). 3744-3746 doi:10.1063/1.346290
 
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