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Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (2000) Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures. Physical Review B, 61 (3) 2159-2163 doi:10.1103/physrevb.61.2159

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Reference TypeJournal (article/letter/editorial)
TitleElectric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
JournalPhysical Review B
AuthorsWetzel, C.Author
Takeuchi, T.Author
Amano, H.Author
Akasaki, I.Author
Year2000 (January 15)Volume61
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.61.2159Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14152364Long-form Identifiermindat:1:5:14152364:6
GUID0
Full ReferenceWetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (2000) Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures. Physical Review B, 61 (3) 2159-2163 doi:10.1103/physrevb.61.2159
Plain TextWetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (2000) Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures. Physical Review B, 61 (3) 2159-2163 doi:10.1103/physrevb.61.2159
In(2000, January) Physical Review B Vol. 61 (3) American Physical Society (APS)

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Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (2000) Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells. Physical Review B, 62 (20) doi:10.1103/physrevb.62.r13302
Wetzel, C., Takeuchi, T., Yamaguchi, S., Katoh, H., Amano, H., Akasaki, I. (1998) Optical band gap in Ga1−xInxN (0Applied Physics Letters, 73 (14). 1994-1996 doi:10.1063/1.122346
Wetzel, C, Takeuchi, T, Amano, H, Akasaki, I (1998) Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures. Journal of Crystal Growth, 189. 621-624 doi:10.1016/s0022-0248(98)00220-6
Wetzel, C., Amano, H., Akasaki, I., Ager, J. W., Grzegory, I., Topf, M., Meyer, B. K. (2000) Localized vibrational modes in GaN:O tracing the formation of oxygenDX-like centers under hydrostatic pressure. Physical Review B, 61 (12) 8202-8206 doi:10.1103/physrevb.61.8202
Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (1999) Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures. Journal of Applied Physics, 85 (7). 3786-3791 doi:10.1063/1.369749
Shapiro, N. A., Kim, Y., Feick, H., Weber, E. R., Perlin, P., Yang, J. W., Akasaki, I., Amano, H. (2000) Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain. Physical Review B, 62 (24) doi:10.1103/physrevb.62.r16318
Hirose, K., Sakano, K., Nohira, H., Hattori, T. (2001) Valence-band offset variation induced by the interface dipole at theSiO2/Si(111)interface. Physical Review B, 64 (15) doi:10.1103/physrevb.64.155325
Ryzhii, M., Ryzhii, V., Suris, R., Hamaguchi, C. (2000) Periodic electric-field domains in optically excited multiple-quantum-well structures. Physical Review B, 61 (4) 2742-2748 doi:10.1103/physrevb.61.2742
Satake, Akihiro, Masumoto, Yasuaki, Miyajima, Takao, Asatsuma, Tsunenori, Hino, Tomonori (2000) Ultraviolet anti-Stokes photoluminescence inInxGa1−xN/GaNquantum-well structures. Physical Review B, 61 (19) 12654-12657 doi:10.1103/physrevb.61.12654
Netzel, Carsten, Bremers, Heiko, Hoffmann, Lars, Fuhrmann, Daniel, Rossow, Uwe, Hangleiter, Andreas (2007) Emission and recombination characteristics ofGa1−xInxN∕GaNquantum well structures with nonradiative recombination suppression by V-shaped pits. Physical Review B, 76 (15) doi:10.1103/physrevb.76.155322
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu (2000) Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy. Applied Physics Letters, 76 (7). 876-878 doi:10.1063/1.125615
 
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